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Copyright© 1999 Djillali Liabes university of Sidi Bel-Abbes.

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Présentation au sujet: "Copyright© 1999 Djillali Liabes university of Sidi Bel-Abbes."— Transcription de la présentation:

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3 Copyright© 1999 Djillali Liabes university of Sidi Bel-Abbes

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5 Faculté de Droit PLAY Faculté des Lettres Faculté de l Ingénieur Faculté de Médecine Faculté de l Ingénieur (Annexe ) Faculté des Sciences Economiques Rectorat Centre de recherche Faculté des Sciences

6 Faculté de Droit PLAY Faculté des Lettres Faculté de l Ingénieur Faculté de Médecine Faculté de l Ingénieur (Annexe ) Faculté des Sciences Economiques Rectorat Centre de recherche Faculté des Sciences

7 Faculté Des Sciences Faculté de Droit Direction Centre ville Oued Makkera

8 Faculté Des Sciences Faculté de Droit Direction Centre ville Oued Makkera

9 Faculté Des Sciences Faculté de Droit Direction Centre ville Oued Makkera

10 Faculté Des Sciences Faculté de Droit Direction Centre ville Oued Makkera - Département de Chimie. La Faculté des Sciences englobe : - Département de Physique. - Département de Maths. - Département de Biologie. - Département d Ecologie

11 Faculté Des Sciences Faculté ds Droit Direction Centre ville Oued Makkera

12 Faculté Des Sciences Faculté de Droit Direction Centre ville Oued Makkera

13 Faculté Des Sciences Faculté de Droit Direction Centre ville Oued Makkera

14 Faculté Des Sciences Faculté de Droit Direction Centre ville Oued Makkera - Droit Privé. La Faculté de Droit englobe : - Droit Public.

15 Faculté Des Science Faculté De l'Ingénieur Direction Centre ville Faculté Des Sciences Faculté Des Lettres

16 Faculté Des Science Faculté De l'Ingénieur Direction Centre ville Faculté Des Sciences Faculté Des Lettres

17 Faculté Des Science Faculté De l'Ingénieur Direction Centre ville Faculté Des Sciences Faculté Des Lettres

18 Faculté Des Science Faculté De l'Ingénieur Faculté Des Lettres Direction Centre ville Faculté Des Sciences - Département d Histoire. La Faculté des Lettres et des Sciences Humaines englobe : - Département de Littérature Arabe. - Département d Anglais.

19 Faculté Des Science Faculté De l'Ingénieur Direction Centre ville Faculté Des Sciences Faculté Des Lettres

20 Faculté Des Science Faculté De l'Ingénieur Direction Centre ville Faculté Des Sciences Faculté Des Lettres

21 Faculté Des Science Faculté De l'Ingénieur Direction Centre ville Faculté Des Sciences Faculté Des Lettres

22 Faculté Des Science Faculté De l'Ingénieur Direction Centre ville Faculté Des Sciences - Département dElectrotechnique. La Faculté de lIngénieur englobe : - Département dElectronique. - Département de Génie Civil. - Département de Génie Mécanique. - Département dInformatique (voir annexe) Faculté Des Lettres

23 Faculté De Médecine Centre ville Oued Makkera Direction Petit Vichy Direction Rectorat Direction Faculté Des Sciences

24 Faculté De Médecine Centre ville Oued Makkera Direction Petit Vichy Direction Faculté Des Sciences Direction Rectorat

25 Faculté De Médecine Centre ville Oued Makkera Direction Petit Vichy Direction Rectorat Direction Faculté Des Sciences

26 Faculté De Médecine Centre ville Oued Makkera Direction Petit Vichy Direction Faculté Des Sciences Direction Rectorat - Département de Pharmacie. La Faculté de Médecine englobe : - Département de Médecine.

27 Direction Faculté De Médecine Oued Makkera Rectorat

28 Direction Faculté De Médecine Rectorat Oued Makkera

29 Direction Faculté De Médecine Oued Makkera Rectorat

30 Direction Faculté De Médecine Oued Makkera Rectorat

31 Centre de Recherche Centre ville Direction de la Faculté Des Sciences Petit Vichy

32 Centre de Recherche Centre ville Direction de la Faculté Des Sciences Petit Vichy

33 Centre de Recherche Centre ville Direction de la Faculté Des Sciences Petit Vichy

34 Centre de Recherche Centre ville Direction de la Faculté Des Sciences Petit Vichy

35 Annexe : ( Informatique ) Oued Makkera Centre ville Direction de la Faculté Des Sciences Petit Vichy Faculté des Sciences Economiques

36 Oued Makkera Centre ville Direction de la Faculté Des Sciences Petit Vichy Annexa : ( Informatique ) Faculté des Sciences Economiques

37 Oued Makkera Centre ville Direction de la Faculté Des Sciences Petit Vichy Economie Annexe : ( Informatique )

38 Faculté des Sciences Economiques Oued Makkera Centre ville Direction de la Faculté Des Sciences Petit Vichy Economie Annexe : ( Informatique ) La Faculté de lIngénieur (annexe) englobe : - Département dInformatique

39 Oued Makkera Centre ville Direction de la Faculté Des Sciences Petit Vichy Annexe : ( Informatique ) Faculté des Sciences Economiques

40 Oued Makkera Centre ville Direction de la Faculté Des Sciences Petit Vichy Annexe : ( Informatique ) Faculté des Sciences Economiques

41 Institut d informatique Oued Makkera Centre ville Direction de la Faculté Des Sciences Petit Vichy Faculté des Sciences Economiques

42 Institut d informatique Oued Makkera Centre ville Direction de la Faculté Des Sciences Petit Vichy Faculté des Sciences Economiques La Faculté des Sciences Economiques englobe : - Département des Sciences Economiques. - Département de Gestion.

43 PLAY PROGRAMME LISTE DES PARTICIPANTS ORGANISATEURS

44 PLAY PROGRAMME LISTE DES PARTICIPANTS ORGANISATEURS

45 SUNDAY, 24 OCTOBER :00-20:00 Check in 20:00-21:30 DINNER 21:30 SOCIAL EVENT CINEMA MONDAY, 25 OCTOBER :00-09:00 Registration-CRU meeting room 09:00-09:30 Opening Ceremoney 09:30-10:00 COFFEE BREAK

46 MONDAY, 25 OCTOBER 1999 Session 1 Chairman: Pr. A. Bousetta (KLA, USA) 10:00-10:40 SYNTHESIS OF INVESTIGATIONS ON THE CHOLESTERYL ALKANOATES FAMILY BY MICRO-RAMAN SPECTROSCOPY IN THE SPECTRAL RANGE cm -1 Prof. B. Khelifa (Lens, France) 10:40-11:20 LIQUID CRYSTAL, PROPERTIES AND APPLICATION IN DISPLAY TECHNOLOGIES Dr. F. Bougrioua(Sint-Pietersnieuwstraat, Belgium) 11:20-11:35 THE ELECTRONIC STRUCTURE OF CuCl : LAPW Calculation M.ferhat ( U.S.T.O, Algerie) Abstract

47 MONDAY, 25 OCTOBER :35-11:50 FRUSTATION DE STRUCTURE DANS DES MONOCOUCHES DE H 2 O, NH 3,CO 2,C 2 H 2,C 2 H 6 et CO ADSORBE SUR LA SURFACE Mg O (100) Dr. M. Sidoumou (Blida, Algeria) 11:50-12:05 INFLUENCE OF THE PHOTOEXCITATION TIME ON THERMOSTIMULATED CONDUCTIVITY SPECTRA IN HYDROGENATED AMORPHOUS SILICON Dr. T. Smail (Algiers, Algeria) 12:05-12:20 EXPERIMENTAL AND NUMERICAL STUDY OF EARLY STAGE OF ISOTHERMAL DECOMPOSITION OF AUSTENITE IN A NODULAR CAST IRON Dr. F. Hellal (Algiers, Algeria) 12:30 LUNCH Abstract

48 MONDAY, 25 OCTOBER 1999 Session 2 Chairman: Pr. A. Rais (Al-khoud, Sultanate of Oman) 14:00-14:40 EFFECTS OF OPTICAL THERMAL PROCESSINGS ON ELECTRICAL PROPERTIES OF SILICON CRYSTALS Prof. A. Barhdadi(Rabat, Morocco) 14:40-14:55 PHOTOSENSITIVITY AND ISOMERISATION PROCESSES OF VINYL CINNAMATES Prof.A. Krallafa (Oran, Algeria) 14:55-15:10 SPECTROSCOPIC INVESTIGATIONS OF INFRARED LASER MATERIALS Prof. M. Diaf(Annaba, Algeria) 15:10-16:30 16:30-17:00 COFFEE BREAK Abstract POSTER SESSION A

49 MONDAY, 25 OCTOBER 1999 Session 3 Chairman: Prof. B. Benyoucef (University of Tlemcenm) 17:00-17:15 THREE DIMENSIONAL MODELISATION OF THE PL INTENSITY PHOTOLUMINESCENCE (IPL) IN SILICON-ON-INSULATOR (SOI) STRUCTURES Dr. T. Benbakhti (Sidi-Bel-Abbès, Algeria) 17:15-17:30 Si-H THIN FILMS TRANSISTOR Dr. M-F. Mosbah (Constantine, Algeria) 17:30-17:45 GENERAL RELATIONS BETWEEN REFRACTIVE INDEX AND ENERGY GAP OF SEMICONDUCTORS Dr. S. Zellag (Bejaia, Algeria) Abstract

50 MONDAY, 25 OCTOBER :45-18:00 ETUDE DE L'ORDRE LOCAL PAR EXAFS DE TRANSMISSION DANS LES MATERIAUX DU SYSTEME GeTeSb Dr. Z. Bouchaour (Oran, Algeria) 18:00-18:15 CORROSION AND WEAR RESISTANCE OF VERMICULLAR (FGV) AND NODULLAR GRAPHITE (FGS) CAST IRON Dr. A. Roula (Jijel, Algeria) 19:00-20:00 Reception at the City Hall of Sidi Bel Abbes 20:00-21:30 DINNER 21:30 SOCIAL EVENT THEATRE Abstract

51 TUESDAY, 26 OCTOBER 1999 Session 4 Chairman: Dr. N. Amrane (Sidi Bel Abbes, Algeria) 09:00-09:40 THE EFFECT OF RADIATION ON II-VI COMPOUND MATERIALS FOR SOLAR CELLS APPLICATION Pr. A. M. Al-Dhafiri (Riyad, Saudia Arabia) 09:40-10:20 SURFACE PLASMONS FOR PROBING OPTICAL DATA OF MULTi-LAYERED THIN FILMS Pr. A. Rais (Al-khoud, Sultanate of Oman) 10:20-10:50 COFFEE BREAK Abstract

52 TUESDAY, 26 OCTOBER 1999 Session 5 Chairman: Pr.B. Khelifa (Lens, France) 10:50-11:05 THERMOELECTRIC PROPERTIES OF SINGLE CRYSTAL ALLOYS (Bi 2 Te 3 ) 90 (Bi 2 Se 3 ) 10 DOPED WITH BROMIDE, GROWN BY THE BRIDGMAN METHOD Dr. M. Chitroub (Algiers, Algeria) 11:05-11:20 ATOMISTIC SIMULATION OF THE STRUCTURAL, ELASTIC AND THERMODYNAMIC PROPERTIES OF CdTe AND ZnTe Dr. G. Merad (Tlemcen, Algeria) 11:20-11:35 FIRST-PRINCIPLES DETERMINATION OF Au-Ni PHASE DIAGRAM Prof. R. Halimi (Constantine, Algeria) Abstract

53 TUESDAY, 26 OCTOBER :35-11:50 STUDY BY CHANNELLING AND X-RAY DIFFRACTION OF HEAVY ANTIMONY DOPED SILICON BY ION IMPLATATION AND THERMAL ANNEALING Prof. C. Benazzouz (Algiers, Algeria) 11:50-12:05 HYDRODYNAMIC EFFECT OF RECTILING DISC ELECTRODE Dr. D. Abdi (Setif, Algeria) 12:05-12:20 MECANISME D'ADHERENCE A L'EFFET SOLIDE DES LIAISONS CERAMIQUE-METAL: CAS DU COUPLE ARGENT-ALUMINE A. Sérier} (Sidi Bel Abbès, Algeria) 12:30 LUNCH Abstract

54 TUESDAY, 26 OCTOBER 1999 Session 6 Chairman: Prof. A. Bouabdellaha (USTHB) 14:00-14:40 COPPER AND LOW DIELECTRIC TECHNOLOGIES Prof. A. Bousetta (California, USA) 14:40-15:30 15:30-16:00 COFFEE BREAK Abstract POSTER SESSION B

55 TUESDAY, 26 OCTOBER 1999 Session 7 Chairman: Prof. A. M. Al-Dhafiri (Riyad, Saudia Arabia) 16:00-16:15 STUDY OF MESA 6H-SiC HIGH VOLTAGE RECTIFIER Dr. K. Gaffour (Tlemcen, Algeria) 16:15-16:30 CARACTRISATION EN FONCTION DE LA FREQUENCE DES DIODES SCHOTTKY Au/InSb/InP(100) Dr. Z. Benamara (Sidi Bel Abbes, Algeria) 16:30-16:45 EFFET DE LA TAILLE DU GRAIN AUSTENITIQUE SUR LE DURCISSEMENT PAR ECROUISSAGE DES ACIERS INOXYDABLES AUSTENITIQUES 304,316 Dr. R. Badji (Blida, Algeria) Abstract

56 TUESDAY, 26 OCTOBER :45-17:00 EFFECT OF ERBIUM INCORPORATION ON PROPERTIES OF DC SPUTTERED HYDROGENATED AMORPHOUS SILICON FILMS} Dr. M. Kechouane (Algiers, Algeria) 17:00-17:15 ELECTRICAL AND MAGNETIC COUPLING IN CERAMIC SUPRACONDUCTOR} Dr. A. Khalfi} (Sidi Bel Abbes, Algeria) 20:00-21:30 DINNER 21:30 SOCIAL EVENT TRADITIONAL MUSIC Abstract

57 WEDNESDAY, 27 OCTOBER 1999 Session 8 Chairman: Prof. A. Barhdadi (Rabat, Morocco) 09:00-09:40 A MONTE CARLO SIMULATION OF MAGNETIC TRANSITIONS IN FERROMAGNETIC MATERIALS Prof. A. Belaidi (Oran, Algeria) 09:40-10:20 ELECTRICAL CHARACTERISTICS OF n-TYPE GaN GROWN BY LP-MOVPE Dr. Z. Bougrioua (Sint-Pietersnieuwstraat,Belgium) 10:20-10:50 COFFEE BREAK 10:50-11:05 OPTIMIZED AL 0.1 Ga 0.9 As SOLAR CELLS WITH J SC =25.076mA/cm 2 AND AM1.5G =24.74% Prof. M. Remram }(Constantine, Algeria) Abstract

58 WEDNESDAY, 27 OCTOBER :05-11:20 CARACTRISATION STRUCTURALE ET ELECTRIQUE DES COUCHES MINCES DE BI 2 S 3 PERPARES PAR LA TECHNIQUE SPRAY PYROLYSIS Dr. N. Benramdane (Sidi Bel Abbes, Algeria) 11:20-11:35 THE USE OF POROUS SILICON IN PHOTOVOLTAIC APPLICATIONS Dr. N.E. Chaabane Sari (Tlemcen, Algeria) 11:35-11:50 STATE OF THE ART OF SEMICONDUCTOR DETECTORS Dr. T. Hadjersi (Algiers, Algeria) 11:50-12:05 LES FIBRES DE VERRE PARTICLARITES TECHNOLOGIQUES ET CONCEPTUELLES DES ENGINS MARINS Dr. M. Khalladi (DRD-CFN, Algeria) 12:30 LUNCH Abstract

59 WEDNESDAY, 27 OCTOBER 1999 Session 9 Chairman: Prof. A. Belaidi (Oran, Algeria) 14:00-14:40 CONSTRUCTION DUNE SOLUTION POUR LEQUATION DIFFERENTIELLE DE PAINLEVE Prof. A. Bouabdellah (USTHB, Algeria) 14:40-15:20 III-N MATERIALS FOR MICROSENSORS APPLICATIONS Prof. A. Bensaoula (SVEC-NASA, USA) 15:30-16:00 CLOSING CEREMONY 16:00 SIDI BEL ABBES SIGHTSEEING 20:00-21:30 DINNER 21:30 SOCIAL EVENT CINEMA Abstract

60 Synthesis of investigations on the cholesteryl alkanoates family by Micro-Raman spectroscopy in the spectral range cm -1 S. Bresson 1, F. Hamza Reguig 2, A. Krallafa 2 and B. Khelifa 1 Monday, 25 October 10: :40 Abstract : Structural properties of the cholesteryl alkanoates family are investigated by Micro-Raman spectroscopy. In this work, we present Micro-Raman spectroscopy studies of the C=O stretching mode for 11 cholesteryl alkanoates with an alkyl chain length n increasing from 2 to 22 in crystalline, istropic liquid and crystal liquid phases. For the cholesteryl alkanoates having a " real " alkyl chain (n > 2), our Micro-Raman spectroscopic results and the X-ray investigations are in good agreement. For n = 2, our interpretation of the structural organization is compared with some semi empirical quantum calculations and with X-ray experiments. So as to explain the difference between our Micro-Raman investigations and the X-ray results for n = 2, we have exhibited an hypothesis.

61 Liquid Crystal, properties and application in display technologies Fatiha Bougrioua Monday, 25 October 10: :20 Abstract Liquid crystals constitute the fourth state of matter in between liquid and solid states. They exhibit in the same time mechanical properties typical of liquid state (like fluidity and surface tension) and optical properties typical of crystalline state (like optical anisotropy and structural order). My discussion will be focused on the thermotropic liquid crystals resulting from compounds with elongated molecules. These phases are classified following the structural distribution of their molecules (molecular order) and their optical properties (birefringence). Decreasing the temperature from the isotropic state, the nematics (N) appear to be followed by different kinds of smectics. Adding a chiral atom to the molecules, it's possible to get twisted structures : the cholesterics (N*), and the ferroelectric twisted smectic (Sc*). Nematic phases with a planar orientation have the same behaviour as an uniaxial crystal with a much higher birefringence. Moreover, the use of an electric field leads to the reorientation of the molecules and the modification of their anisotropic optical properties. The polarisation of incident light is th en influenced permitting display applications. My presentation will give an

62 overview of these applications including passive matrix displays (PMDs) and active matrix displays (AMDs). To optimize the use of LCD's, it's important to have very pure compounds. Nevertheless, a lot of ionimpurities are introduced during the processing or operating leading to the deterioration of the optical behaviour of the display. The last part of my presentation will stress on the technologies developed in our laboratory (ELIS, Gent) permitting the study of the ions behaviour and the measurement of ther concentrations and mobilities in prototype samples.

63 FRUSTATION DE STRUCTURE DANS DES MONOCOUCHES DE H 2 O, NH 3, CO 2, C 2 H 2, C 2 H 6 et CO ADSORBE SUR LA SURFACE MgO (100). M. Sidoumou, S. Bourahla and F. Bouamara Monday, 25 October 11: :50 Abstract: ²Le but de ce travail est de montrer la perturbation apportée par une surface doxyde de magnésium Mg(100) à larrangement de molécules étrangères qui y sont adsorbées. On commencera le résultat de la compétition, parfois subtile entre les interactions adsorbat-adsorbat et adsorbat-substrat. On montrera quen fait, cette compétition fait apparaître des structures plus ou moins frustrées ayant des relations dépitaxie bien ou mal définies selon le cas. Nous illustrerons ce comportement grâce à létude par diffraction délectrons lents des molécules H 2 O, NH 3, CO 2, C 2 H 2, C 2 H 6 et CO adsorbés sur la surface MgO(100) clivé in- situ. Sur cette surface, la symétrie carrée des sites dadsorption, la nature (partiellement) ionique des liaisons Mg x+ O x- (x<2) et la présence (éventuelle de moments multipolaires dans les molécules adsorbées mettent bien en valeur, dans une gamme étendue d'effets, ces phénomènes de frustration de structure.

64 Influence of the photoexcitation Time on Thermostimulated Conductivity Spectra in Hydrogenated Amorphous Silicon T.Smail *, M.Aoucher *, T.Mohammed-Brahim ** * Laboratoire des Couches Minces et des Semi-conducteurs Institut de Physique, USTHB,BP32, Bab-Azzouar, El-Alia, Alger, Algeria ** GMV,Université de Rennes1, Campus de Beaulieu 11B,35042 Rennes Cedex, France Monday, 25 October 11: :05 Abstract: The interpretation and exploitation of the experimental thermally stimulated conductivity (TSC) spectra in hydrogenated amorphous and photoexcitation time in a-Si:H is presented. A numerical simulation based on the Shockley-Read-Hall statistics of both electrons and holes is presented. The standard distribution of localised states in a-Si:H is assumed, i.e. exponential conduction and valence band tails and the dangling-bond correlated defect states. All possible thermal emission, trapping and recombination process of free carriers, occurring between extended and localised states, are considered. This model requires a resolution of a set of non-linear deferential rate of variables. The free electron, free hole and trapped charge densities are then numerically calculated by using the Newton method. For typical sets of a-Si:H microscopic parameters, the calculated TSC spectrum versus temperature show two prevalent peaks. Measurements of TSC in an undoped a-Si:H

65 sample show that the amplitude of the first peakdepends strongly on the exposition time t e. Its amplitude decreases with t e.

66 Experimental and Numerical study of Early Stage of Isothermal Decomposition of Austenite in a Nodular Cast Iron 1 F.Hellal, 2 J.Lacaze, 3 A.Hazotte and 1 S.Rechak Monday, 25 October 12: :20 Abstract: The initial stage of isothermal decomposition of austerite to ferrite and graphite in a spherical graphite cast iron was examined. It was investigated by diatometry metallography and image analysis. During isothermal holding at 680°C after homogenization at 900°C, it was found that a systematically contraction of the material occurs before the phase transformation starts. The occurrence of this contraction at higher holding temperatures (695°C and 750°C), where the decomposition cannot proceed, as well as its correlation to the graphite nodule count, led to the conclusion that the contraction should be related to the density change due to the compositional change of austerite, and more precisely to the transfer of carbon from supersaturated austerite to graphite. An estimate (using the thermocalc software and the SGTE database) of the volume change associated with the destruction of. austerite and with the related increase of the graphite volume fraction was performed. Calculations showed good agreement with experimental results

67 EFFECTS OF OPTICAL THERMAL PROCESSINGS ON ELECTRICAL PROPERTIES OF SILICON CRYSTALS A. Barhdadi 1 and J-C. Muller 2 1 Laboratoire de Physique des Semiconducteurs et de l'Energie Solaire, Ecole Normale Supérieure de Takaddoum, B. P. 5118, Rabat, Morocco. 2 Centre de recherches Nucléaires (IN2P3), Laboratoire PHASE, F Strasbourg, France. Monday, 25 October 14: :40 Abstract: Optical thermal processes (OTP) can offer many advantages in a strategy focused on cost-effective techniques for the preparation of electronic devices, especially solar cells, in an automatic and continuous way. There exist several OTP which operate either in an adiabatic regime with coherent light (Lasers) or in an isothermal short duration regime with incoherent light (Rapid Isothermal Processes). These optical heating techniques are advantageous because they are fast and clean as only the sample is heated and not the reactor. Moreover, the lamp furnace annealing, which is presently as fashionable annealing mode, offers some attractive features such as low time and power consumption and hence a minimum overall thermal budget. However, despite this great interest, one of the major obstacles to the development of OTP for large practical and industrial applications is the fact that they induce an important concentration of electrically active defects in the processed samples. These defects were through to be frozen-in during

68 the rapid quenching procedure characterizing OTP. In this paper we report some experimental results obtained by studying the effects of Fast Isothermal Processing (FIP), carried out in the lamp furnace, on the electrical performance of silicon. The effects observed are compared to those resulting from the conventional treatments. The influence of experimental conditions of the process such as the duration, the temperature and the annealing ambient are also examined.

69 PHOTOSENSITIVITY AND ISOMERISATION PROCESSES OF VINYL CINNAMATES N. Blidi Boukamel, A. Krallafa and B. Khelifa Laboratoire de Physico Chimie et Mod\'elisation, Département de Chimie, Faculté des Sciences. Université d'Oran (Es-Senia), Algérie. Monday, 25 October 14: :55 Abstract: Poly (vinilcinnamates) (PVCN) are found to be photosensitive with several isomerisation processes involved. In recent quantum calculations, energetic considerations [1] and substitution effects [2] were carried out in order to determine the general tendancy to photoisomerisation processes. In the present work a new path for the determination of isomerisation energies is proposed. With the help of this new approach, the path and mecanisms involved in such processes are investigated in full details both for the subsituted and the non substituted vinyl cinnamate. An additional hydrogen bond energy in the S- Trans-Cis configuration together with more accurate reaction paths lead to a calculated energy in bett.r agreement with the experimental isomerisation energy [3-4] (54.5Kcal/mole). The evidence of this new feature is obtained with a DFT quantum calculation and the use of 3-21G** basis set.

70 SPECTROSCOPIC INVESTIGATIONS OF INFRARED LASER MATERIALS M. Diaf 1, M. Mayoufi 1, A. Braud 2, C. Labbé 2, S. Girard 2, J. L. Doualan 2, R. Moncorgé 2 and J. Margerie 2. 1 Institut de physique, université d'Annaba, BP 12, Annaba (Algeria). 2 CIRIL-LSA, ISMRA, 6 Bd Maréchal Juin Caen Cedex (France). Monday, 25 October 14: :10 Abstract: Solid laser materials doped with activator ions (rare earth ions or transition ions) have been the subject of intensive research for many years. These materials are characterized by their use as laser radiation propagating in the free space and are inoffensive to the human eye. The spectral emission lying in the range 1.5 m to 2 m, so- called eye-safe domain, corresponds to this type of requirements. The aim of this project, a part from military use, is range pollutant detection, fiber telecommunications,...Among the solid laser materials doped with rare earth ions studied intensively lately, the fluoride crystals, known by their mow phonon energies and their interesting mechanical properties are distinguished. The crystal field action on the introduced earth ions is fairly low and the different electronic transition energies are in the same order of magnitude compared to that of free ions. In this way, we can obtain an approximation of the energies required for the

71 absorption and fluorescence spectroscopic processes. Therefore, the choice of the required rare earth is permitted.

72 Three dimensional modelisation of The PL Intensity Photoluminescence (IPL) in Silicon-On-Insulator (SOI) Structures T. Benbakhti, D. Mehal, G. Bassou, A. Kadoun Laboratoire de Microscope Electronique, Institut délectronique Université Djillali Liabès. B.P Sidi-Bel-Abbès, Algérie Monday, 25 October 17: :15 Abstract: Room temperature (RT) photoluminescence (PL) depends directly on the electric properties of materials (lifetime, carriers density…). Up to now, the photoluminescence intensity has been evaluated in unidimensionnel system which is limited to describe the lateral diffusion. In this case, carriers essentially distribute in depth. For many device applications silicon-on-insulator (SOI) materials offer several advantages as compared to bulk silicon. Their technology simplifies device processing due to easier device insulation and many find many applications in fields such as very-large scale and high speed radiation hard circuits, three dimensional micro-machined structures and integrated optics. It is also gives reduced parasitic capacitance resulting in increasing speed and lower power consumption. We present examples of our calculations and experimental results and demonstrate the difference with those in three dimensional resolution, without the effect of the electric field.

73 General relation between refractive index and energy Gap of semiconductors. S. Zellag 1, M. Bouafia 2 and A. Medjahed 2.. Monday, 25 October 17: :45 Abstract: We present in this work a study on the behavior of the band gap energy of some semiconductors in dependence of the refractive index. It is demonstrated the advantage of existing relations in the study of semiconductors applied for opto-electronic devices. Using empirical formula proposed by some authors, we show by simulation the large variation of the properties as function of refractive index, and we discuss the validity conditions of the different relations.

74 Etude De lOrdre local par EXAFS de Transmissiondans les Materiaux du Système GeTeSb. Z. Bouchaour, M. Belhadji, L. Benabed, A. Abdelmoula, A. Mamoun. Institut de physique, Université dOran. Monday, 25 October 17: :00 Abstract: La structure locale dans les verres du système GeTeSb proche de la composition eutectique et périodique a été étudié par spectroscopie dabsorption X en se plaçant au seuil K du Germanium (Es = eV). Nos résultats montrent que latome excité est coordonné par quatre atomes de tellure à une distance interatomique moyenne de 2.60 A et un facteur de Debye-Waller de Nous avons montré également que le nombre de liaisonGE-Te diminue et la distance de la liaison Ge-Te reste constante quand le pourcentage de tellure diminue, nous avons discuté ces résultats de lEXAFS et ceux obtenues par analyse enthalpique différentielle (D. S. C) et diffraction X.

75 CORROSION AND WEAR RESISTANCE OF VERMICULLAR (FGV) AND NODULLAR GRAPHITE (FGS) CAST IRON A. ROULA 1, G. A. KOSNIKOV 2 Monday, 25 October 18: :15 Abstract: We present the results of a parametric study on the corrosion (in the nitric acid) and the wear resistance of cast irons with vermicullar (FGV) and nodullar (FGS) graphite. A similar attention has been focused on the Mn content (trying to insure the perlitisation of the metallic structure). We used this -element (in place of Sb, Sn, Ni…) because of its high concentration in Ghar Djebillet Iron ore. First, we observe that average values of these 02 working properties in FGV are situated between those recognised for cast irons with lamellar graphite (FGL) and FGS, as supposed to be by /1, 2, 3, 4/. We notice the great hardness and confirm the high wear /5/ and corrosion resistance of the perlitic FGV with a singular mathematics model.The nodullarisasation of the precipitate graphite contributes to slow the corrosion of FGV and FGS. This is clearly described by another mathematical model.

76 The effect of radiation on II-VI compound materials for solar cells application Dr A. M. AL-DHAFIRI Tuesday, 26 October 09: :40 Abstract: CdS and CdTe single crystal was grown from vapour phase technique. While CdS was etched by laser dry etching technique (excimer laser 337 nm wave-length), CdTe was etched using photochemical method in which the sample were illuminated during the etching process. Schottky diodes were made by vacuum evaporation of gold onto both CdS and CdTe substrates. The influence of the intensity of the laser beam used during the etching processes of these substrates on the electrical properties were studied. The results show that a fundamental different change was observed on the electrical properties such as the barrier height, carrier concentration, identity factor, and forward-bias. These electrical parameters were calculated through the I-V characteristics and C -2 – V measurements of the Au-CdS and Au-CdTe. The result was presented and discussed as a function of the use of laser during the etching process.

77 SURFACE PLASMONS FOR PROBING OPTICAL DATA OF MULTi- LAYERED THIN FILMS A. Sellai and A. Rais Department of Physics, College of Science, Sultan Qaboos University, P.O.Box 36 Al-khoud, Sultanate of Oman. Tuesday, 26 October 09: :20 Abstract: In the present work, it is shown that optical excitation of surface plasmons (SP) can be used to obtain the optical constants and thickness of thin films in a multi-layered structure. The optimum coupling phenomenon between incoming light and SPs appears as a minimum in the reflectance. Moreover, the sensitive dependence of the reflectance minimum on the optical constants and the thickness of the metallic layer suggest that they can be determined very accurately. Indeed, by fitting the measured ATR to an analytical expression of the calculated reflectance for a limited number of layers (two and three), the optical constants and the thickness of the metal can be obtained easily. However, in the case of more than three layers system where it is difficult to derive an analytical expression, a standard matrix formalism is utilized to calculate the reflectance. This formalism is then combined to a numerical least square algorithm (Simplex) to fit the measured reflectance. The method is applied to the multi-layered system: Prism / Air gap / Oxide / Al / GaAs. The optical constants and thickness of Al as well as those of the oxide layer are taken as parameters. An excellent fit of the theoretical to the experimental reflectance is obtained.

78 Thermoelectric properties of single crystal alloys (Bi 2 Te 3 ) 90 (Bi2Se3) 10 doped with bromide, grown by the bridgman method M. Chitroub and M. Kerkar Ecole nationale polytechnique, département de Metallurgie El-Harrach, Alger, Algérie. Tuesday, 26 October 10: :05 Abstract: According to the literature, the best n-type thermoelectric materials for refrigeration at room temperature are the compounds made of Bi 2 Te 3 and Bi 2 Se 3 doped with an halogen. The aim of the present study has been to determine the optimal concentration of bromide for the (Bi 2 Te 3 ) 90 (Bi2Se3) 10 solid solution. The solid composition (Bi 2 Te 3 ) 90 (Bi2Se3) 10 is in thermodynamical equilibrium with the liquid (Bi 2 Te 3 ) 94 (Bi2Se3) 6 at 591°C. This composition is then chosen for the initial growth condition. Different concentration of SbBr 3 : 300, 400, 600 and 1000 ppm in weight are added to the initial composition : Bi, Te and Se have a height purity (99,999 ) and to reduce the oxides they are melted in an H2 and He atmosphere in a quartz ampoule. Each ampoule contents 70g of this melt composition. After few hours at 650°C, the ampoule is lowered in a bridgman furnace, with a growing rate of 1 mm/h. The cleavage planes of the obtained ingots are parallel to the growth axis. Samples in the form of copper discs (15 mm

79 in diameter and 3mm thick) were cut perpendicularly to the same axis and soldered between two copper discs. Carrier concentration are measures by hall effect. Furthermore, the chemical composition of the samples is studies from microprobe analysis and the dopant concentration of bromide is determined from Neutron activation analysis (N.A.A). The concentration profiles of tellurium, selenium and bromide along the ingot are determined. The plots of the thermal conductivity, the electrical resistivity and the Seebeck coefficient as a function of atomic concentration of bromide are realised at room temperature. From the values of* and * we calculated the figure of merit (Z= ) and the results are reported. We obtained a maximum of Z equal to K -1 for es19 at.cm -3 of bromide and then Z decreases slowly to the value of K -1 for at cm -3 of bromide. The bridgman technique is very used for the growth of thermoelectric materials, because it is an easy and quick method. This growing technique applied in the case of our doped materials has for consequence an inhomogeneity of the inhomogeneity is due to the tellurium, selenium and bromide segregation. The T.H.M technique developed in our laboratory could lead us to a better control of tellurium and selenium distribution. The crystals grown by this method have a higher mobility and so we could reach higher figure of merit for a larger part of the ingot.

80 ATOMISTIC SIMULATION OF THE STRUCTURAL, ELASTIC AND THERMODYNAMIC PROPERTIES OF CdTe AND ZnTe. M. B. Kanoun +, W. Sekkal ++, H. Aourag ++, G. Merad + Tuesday, 26 October 11: :20 Abstract: The II-VI semiconductors occupy currently a privileged position in the domain of material sciences. The interest of such a domain is in large part due to the multiple applications of these compounds in different fields of investigations as the infrared, the nuclear detection and the solar cells. CdTe and ZnTe are prototype II-VI semiconductors and their cubic phase, which occurs naturally as a mineral has been called the zinc-blende structure. n the present study, we present molecular-dynamics simulation of structural, elastic and thermodynamic properties of cubic CdTe and ZnTe. The empirical Tersoff potential has been used to calculate the equilibrium properties of CdTe and ZnTe, i.e., the cohesive energy, the lattice constant, the bulk modulus and its pressure derivative. Furthermore, we have calculated the elastic constants, the thermal expansion coefficient, the specific heat and the mode Gruneisen parameter. Inaddition, we have examined the structural phase transition from zinc-blende structure to the rock-salt structure under hydrostatic pressure. Finally, our simulation is extended to study the CdTe and ZnTe in the liquid phase. Our results exhibit an excellent agreement with the available experimental data.

81 STUDY BY CHANNELLING AND X-RAY DIFFRACTION OF HEAVY ANTIMONY DOPED SILICON BY ION IMPLATATION AND THERMAL ANNEALING C. Benazzouz, N. Boussaa, M. Zilabdi, A. Guittoum and S. Behli Commissariat à l'Energie Atomique 2 Bd. Frantz Fanon, B.P. 399 Alger Gare, Algérie Fax: Tuesday, 26 October 11: :50 Abstract: Electrical activation of heavily implantated Sb in Si, recrystallization of amorphous layer and complex characterization during temperature anneals are studied by ion channeling analysis, four point probe measurement and X-ray diffraction analysis. These measurements are carried out on (100) silicon wafers implanted with a dose of 1(1016 Sb + /cm -2 at 100 KeV. Following different isochronal (10 minutes) annealing steps at temperatures ranging from 350 to 900C, the antimony substitutional fraction is determined and the data compared with sheet resistivity measurements. We find that the maximum electrically activity is achieved aroud 620 C and considerable decrease in the amount of defects is observed in the lattice disorder profile.

82 Mécanisme dAdhérence A lEffect Solide Des Liaisons Ceramique-Metal : Cas Du Couple Argent-Alumine. A. Sérier, D. Tréheux. Ecole Centrale de Lyon, Laboratoire Materiaux-Mécanique Physique, URA CNRS Ecully Cedex, France. Tuesday, 26 October 12: :20 Abstract: Silver was solid – state bonded with aluminium. These materials are a priori non reactive, their thermodynamic work of adhesion is low their mosmacth in thermal expansion coefficient is very considerable. Nevertheless, we show that strong bonds can be obtained by acting not only on the solid – state – bonding conditions, but on the initial preparation of both materials too.

83 Copper and low dielectric technologies Ali Bousetta Tuesday, 26 October 14: :40 Abstract: As we move into the deep-submicron regions (< 0.20 microns),Integrated Circuits (ICs) interconnects will have to change from thestandard Aluminum (Al), which is now used exclusively as the main interconnect material. This paper discuss the present state of the art and future trend of ICs interconnects. The current status, challenges and opportunities of Copper (Cu) and low-k dielectric, that are poised to take over as the main on-chip interconnects, are reviewed and discussed. The role of KLA-Tencor, in helping ICs manufacturers and foundries identify critical yield- limiting mechanism in the copper process is also discussed.

84 Caractérisation en Fonction de la Fréquence des Diodes Schottky Au/InSb/InP(100) Z. Benamara*, B. Akkal*, A. Boudissa*, B. Gruzza**. *- Laboratoire de Microélectronique Appliquée- Université Djillali Liabes. **-Laboratoire des Sciences des Materiaux pour lElectronique et dAutomatique, Université Blaise Pascal de Clermont II, Les Cézaux, Aubière Cédex, France Tuesday, 26 October 16: :30 Abstract: On propose dans ce travail la caractérisation de linterface des diodes Schottky Au/InSb/InP (100) et déterminer leffet de LInSb est une fine couche de restructuration permettant de bloquer la migration dIndium en surface. Les paramètres électriques caractérisant linterface sont extrais à base des mesures des caractéristiques capacité- tension C(V) et conductances-tension G(V) en fonction de la fréquence ainsi que courant-tension I(V) en direct. La densité détats dinterface N ss qui est de lordre de 9.98x10 11 eV -1 cm -2 est responsable de la non linéarité de la caractéristique I(V). Le temps de relaxation est indépendant de la tension de polarisation et lénergie des états dinterface est varie entre 2.53x10 -3 s et 6.21x10 -3 s.

85 Effet de La Taille du Grain Austenitique sur le Durcissement par Ecrouissage des Aciers Inoxydables Austenitiques 304,316. R. Badji, M. Hadji, M. Temmar Département des Sciences des Matériaux, Institut de Mécanique, Université de Blida, B. P 270, Route de Soumâa, Blida Tuesday, 26 October 16: :45 Abstract: Le durcissement par écrouissage des aciers inoxydables austénitiques est étroitement lié à la quantité de martensite formée sous leffet de la déformation plastique. Dans ce travail, nous avons étudié leffet de la taille du grain austénitique sur le taux de durcissement par écrouissage des nuances austénitiques du type AISI 304 et 316, lors de leur déformation par laminage à la température ambiante. Pour ce faire, des échantillons de ces aciers ayant des tailles de grains de 15, 125, 229 m pour lacier inoxydable 304 et 25 et 115 m pour lacier inoxydable 316 ont été laminé avec des taux de réduction allant de 16 à 49%.

86 Effect of Erbium Incorporation on Properties of DC Sputtered Hydrogenated Amorphous Silicon Films M. Kechouane, N. Beldi, O. Mouheb, T. Mohammed-Brahim*, A. S. Barriere**, H. LHaridon*** and M. Gauneau*** Laboratoire Couches Minces et Semiconducteurs -U. S. T. H. B- Institut de Physique-BP 32-El Alia Alger- Algeria. *GMV- Université de Rennes I-Campus de Beaulieu- Bat. B de Physique Rennes Cedex-France. **Laboratoire IXL-Université de Bordeaux I – 351 Cours de la Libération –F Rennes Cedex-France. ***France telecom CENT/LAB/RIO Lannion-France. Tuesday, 26 October 16: :00 Abstract: Erbium doped semiconductors present much interest for optoelectronic devices owing to a luminescence relatively independent of the host semiconductor matrix. The great interest in the Er 3+ ions that can be incorporated into the host material without showing a concentration-quenching problem is an important factor in designing Er-doped optical devices. Thus, a high solubility of erbium is desirable because the optical power out is proportional to erbium content into the host-matrix. It is estimated that an erbium concentration as high as ~cm -3 is necessary for thin film optical amplifiers.

87 A MONTE CARLO SIMULATION OF MAGNETIC TRANSITIONS IN FERROMAGNETIC MATERIALS A. BELAIDI, L. BAHBAH + and F. Z. BENKENFOUD Département de Génie-Electrique, E.N.S.E.T. DOran, Oran-ALGERIE. Wednesday, 27 October 09: :40 Abstract: In this work we study the effect of temperature on the alignment of spins in ferromagnetic materials by means of Monte Carlo simulation. An Ising model was used to study the system of interacting spins and the spin dynamic was based on the Metropolis algorithm. A strong magnetic transition was found at a particular temperature (critical or Curie temperature) which characterizes the transition of the material from ferromagnetic to paramagnetic. We surprisingly found that this phenomenon occurs even in one- dimensional ferromagnetic materials where other workers claims that there is no magnetic transition in such materials. The results of the physical quantities obtained by simulation are, however, in good agreement with those predicted by theory.

88 Electrical characteristics of n-type GaN grown by LP-MOVPE Z. Bougrioua*, J.-L. Farvacque#, I. Moerman*, E.J. Thrush" * Wednesday, 27 October 09: :20 Abstract: Because of their specific properties, such as wide band gap, thermal and chemical stability, high breakthrough field and high electron saturated drift velocity, the group III nitride compound semiconductors are currently attracting more and more attention for the development of advanced high power and high frequency electronic devices. In spite of the promising erformance of the first elemental devices as field effect transistors, the production of material with low residual impurities, low extended defect density, high electron mobility and accurate control of doping and compensation is still very challenging. Undoped Gallium Nitride (GaN) material displays quite a poor mobility because of the high density of point defects and extended defects as dislocations (columnar structure), which are a consequence of the growth on a highly mismatched substrate such as sapphire. This presentation contributes to the understanding of the correlation between electrical characteristics of n type GaN layers grown by Low Pressure Metallorganic Vapor Phase Epitaxy (LP-MOVPE) and the microstructural properties of the material. One of the

89 experimental results shows that the room temperature carrier mobility in bulk layers of undoped or Si doped GaN improves suddenly by up to a factor of 20 once the carrier density exceeds a critical value of about 7e17cm-3. This clear transition in transport regime can't be explained in the framework of a transport model considering dislocations as randomly distributed scattering centers. But it can be theoretically reproduced by assuming that the columnar structure is responsible for internal electronic barriers.

90 OPTIMIZED AL 0.1 Ga 0.9 SOLAR CELLS WITH J SC = mA/cm 2 AND AM1.5G = 24.74% L. Semra, M. Remram, and A. Laugier * Institut d'Electronique, Université de Constantine, Route Ain-El-Bey, Constantine, Algérie. * Laboratoire de Physique de la Matière, INSA, Lyon, 20 Avenue A. Einstein, Villeurbanne, France. Wednesday, 27 October 10: :05 Abstract: The main aim of the several simulations, theoretical or experimental researches is to improve conversion efficiency advanced technology. Since the ternary alloy AlGaAs grown on Si substrate is among the most important material candidate for optoelectronic circuitry as well as for solar cells application and is specially of considerable interest for multispectral applications. This paper describes a study of an Al 0.1 Ga 0.9 As solar cell. The aim of this work is to find the optimized device makeup such as the semiconductor layer thickness and impurity doping in emitter and base regions. The optimal emitter thickness and doping as well as the base thickness and doping are calculated. In this work the judicious choice of aluminum content of the AlGaAs layer is a particular considered point. The results are generated for 0.25 cm 2 area with an Erfc emitter profile. A front surface recombinaison velocity S front of cm/s is adopted here. For the back surface

91 recombinaison velocity S back a value of cm/s for an Ohmic contact is used and a value of cm/s for a BSF layer.

92 Caractérisation structurale et électrique des couches minces de Bi 2 S 3 préparées par la technique Spray pyrolysis N.Benramdane, M.Medles, M. Latreche, A. Bouzidi, Z. Kebbab et H. Tabet Laboratoire Physique des matériaux et dispositifs, Institut délectronique Université Djillali Liabes de Sidi Bel Abbès, Algerie. Wednesday, 27 October 11: :20 Abstract: Les films de Bi 2 S 3 polycristallin ont été préparés par la technique Spray Porlysis en utilisant comme produits chimiques de départ le chlorure de (BiCl 3 ) et la thiourée CS(NH 2 ) 2 préparés en solutions de Molarité 0.2. Les couches sont obtenues par déposition thermochimique sur des substrats en verre Pyrex à une température de 550 K. Lidentification de la nature polycristalline des films est faite en utilisant un diffractomètre -2. La microscopie électronique des couches montre que ces derniers sont dune morphologie assez particulière et présence des surfaces qui se caractérisent par des fonctions en aiguilles entrelacées. Les mesures deffet Hall montre que ces couches sont du type N avec une concentration en porteurs de charges de cm -3 et une mobilité de Hall de 19.7 cm 2 /V.s. Lallure de la variation de la conductivité en fonction de la température montre que celle- ci suit une loi de la forme, avec E a = 65 meV comme énergie dactivation et 0 = cm -1, et confirm la nature semiconductrice du composé.

93 The use of porous silicon in photovoltaic applications A. Ould-Abbes, K. Rerbal and N.E. Chaabane Sari Laboratoire de physique des matériaux, institut délectroniques Université Aboubekr Belkaid de Tlemcen Bp 119, Tlemcen 13000, Algérie Wednesday, 27 October 11: :35 Abstract: Crystalline silicon is the dominant semiconductor material in use for photovoltaic cells. Furthermore, the porous silicon (PS) formed by simple etching presents physical characteristics that can have a particular interest for these applications. Indeed, a thin PS film deposited at the emitter surface of p/n + junction plays a role of an effective antireflection coating (ARC). In this work, we present optical and photovoltaic properties of p/n + Si junctions so obtained, before and after oxidation, under different etching parameters in order to optimize the anti- reflection properties of the PS layer. The optical properties of thin PS film have been studied by spectroscopic ellipsometry (SE) and total reflectance measurements, and compared to those of the anti-reflection layers prepared by the chemical depôsite techniques. The spectral response measurements of the solar cells with the partly porous emitter demonstrate clearly the improvement in the quantum efficiency after oxidation of the PS layer.

94 State of the Art of Semiconductor Detectors T.Hadjersi Unité de développement de la téchnologie du Silicium 02, Bd. Frantz fanon B.P. 339 Alger-Gare, Algérie Wednesday, 27 October 11: :50 Abstract : The development of semiconductor radiation detectors as spectrometers started in 1985 with the first study of a Germanium surface-barrier detector as heavy-particle spectrometer by Mayer and Gossik. However, prior to this time there was extensive development of gas detector, such as Geiger-Muller tubes, ionization chambers, and proportional counters. Among advantages of semiconductor detectors are the linear response over a large energy range, the fast pulse-rise time from most of the detector, their relative simplicity and convenient size, the possibilities of making special configuration, their density, which enables them to stop energetic charged particles and the high resolution that can be obtained. The principal aim of this article is to give a state of the art in semiconductor detectors for photon and charged particle. Most attention is devoted on more recent characteristics obtained with various detectors up to now. This paper also presents the application domain of each detector type.

95 The Electronic Structure of CuCl M.ferhat Laboratoire de Physique. Institut du Tronc Commun. Université des Sciences et de la Technologie dOran. ( U.S.T.O ). Oran Algerie B.Bouhafs and H.Arouag Computational Materials Science Laboratory, Physics Departement, University of Sidi Bel – Abbes, Sidi Bel – Abbes Algeria. Abstract We report a systematic study of the electronic properties of zinc – blende CuCl. The band structure, valence and conduction effective mass, density of states and charges densities are calculated using the local density all – electron full – potential linearized augmented plane wave method. Our results are in agreement with a host of theoretical and experimental data yielding a consistent description of electronic properties of this class of technologically important semiconductor compounds.

96 Preface The first Arab Congress in Materials Science is organized by the University of Sidi Bel- Abbès jointly with the Algerian Materials Research Society (AMRS). This meeting aims to enhance the communication between Arab scientists in both experimental materials research and computational work. This conference will cover materials experiment and modelling in the widest sense of the word, ranging from traditional solid state physics to the study of biologically relevant applications. We will approach this vast topic by emphasizing the experimental and computational aspects, as they relate to not only the amazing richness of different materials and associated phenomena, but to the wealth of experimental techniques used to fabricate and characterize complicated novel materials. This conference is also a good opportunity for a close interaction between Arab physicists and chemists. Topic Areas :

97 Preface The first Arab Congress in Materials Science is organized by the University of Sidi Bel- Abbès jointly with the Algerian Materials Research Society (AMRS). This meeting aims to enhance the communication between Arab scientists in both experimental materials research and computational work. This conference will cover materials experiment and modelling in the widest sense of the word, ranging from traditional solid state physics to the study of biologically relevant applications. We will approach this vast topic by emphasizing the experimental and computational aspects, as they relate to not only the amazing richness of different materials and associated phenomena, but to the wealth of experimental techniques used to fabricate and characterize complicated novel materials. This conference is also a good opportunity for a close interaction between Arab physicists and chemists. Topic Areas :

98 International Programme Committee : M. S. Abujafar (Palestine) M. Henini (UK) N. M. Abu-Samreh (Palestine) H. A. Ismael (Qatar) M. Al-Dhafiri (Saudi Arabia) I. Ismael (Kuwait) A. S. Al-Harti (Saudi Arabia) A. Issam (Oman) S. N. Al. Refaie (Jordan) M. Kerouad (Morocco) M. Al-Saie (Bahrain) M. Laradji (Canada) N. Amrane (Algeria) M. Meskini (Tunisia) H. Aourag (Algeria) A. Qteish (Jordan) A. Bensaoula (USA) A. Rais (Oman) A. Bouabdellah (Algeria) M. K. Sabra (Syria) K. S. Bhatia (Kuwait) M. B. Sayed (Egypt) N. Bouarissa (Algeria) N. Tit (UAEmirats) M. M. El-Desoky (Egypt) M. Zoaeter (Lebanon)

99 Organizing Committee: Dr. N. Amrane (Department of Physics, Univ. of Sidi Bel Abbes) Prof. H. Aourag (Department of Physics, Univ.of Sidi Bel Abbes) Dr. B. Bouhafs (Department of Physics, Univ. of Sidi Bel Abbes) Dr. A. Tadjer (Department of Physics, Univ. of Sidi Bel Abbes) Dr. B.Mouffok (Department of Chemistry Univ. of Sidi Bel Abbe Dr. Louhibi (Department of Physics, Univ. of Sidi Bel Abbes) M. O. Benhelal (Department of Physics, Univ. of Sidi Bel Abbes) M. A Chahed (Department of Physics, Univ. of Sidi Bel Abbes) Ms. W. Sekkal (Department of Physics, Univ. of Sidi Bel Abbes) Ms. Z. Nabi (Department of Physics, Univ. of Sidi Bel Abbes) Ms. S. Meçabih (Department of Physics, Univ. of Sidi Bel Abbes) Ms. N. Benosman (Department of Physics, Univ. of Sidi Bel Abbes) M. B. Abbar (Department of Physics, Univ. of Sidi Bel Abbes) M. A.Sayed (Department of Physics, Univ. of Sidi Bel Abbes) M. A. Lakdja (Department of Physics, Univ. of Sidi Bel Abbes)

100 WELCOME PLAY

101 WELCOME

102 VALENCE BAND STRUCTURE OF HgCdTe/CdTe STRAINED-LAYER QUANTUM WELL N. Mokdad, K. Zitouni, A. Kadri. Strain effects on graded index separate confinements heterostructures (GRIN-SCH) M. Mattalah, K. Zitouni, A. Kadri CHARACTERIZATION OF QUATERNARY SEMICONDUCTOR MATERIALS H. Ait Kaci PHOTON SCANNING TUNNELING MICROSCOPY: THEORETICAL AND EXPERIMENTAL STUDY OF A BIDIMENSIONNEL GRATING H. Boutaleb, A. Mamoun,G. Bassou, L. Salomon, F. De Fornel POSTER SESSION A

103 ANOMALOUS BEHAVIOR IN THE PHYSICAL PROPERTIES OF BORON COMPOUNDS Bachir Bouhafs and Hafid Aourag OPTICAL PROPERTIES OF ACTIVATE LASER (F 2 + )H CENTRES IN NaCl CRYSTALS DOPED WITH HYDROXIDE IONS E. Boulma COMPUTED DECONVOLUTION OF ABSORPTION SPECTRA OF ACTIVE LASER MATERIALS : CARBONATE-, AND SODIUM-DOPED ALKALI HALIDE CRYSTALS K. Labbaci MONTE CARLO SIMULATION OF THE TRANSPORT OF SLOW POSITRON IN ALUMINIUM S. Saib, H. Latelli, S. Zellag and N. Bouarissa

104 WELDED STEEL CRACKING H. Zedira and A. Boumaaza RBS-CHANNELLING STUDY OF ANTIMONY IMPLANTED SI(100) R. Labbani and R. Halimi HIGHER TWIST EFFECT AND (T-EFFECT IN A HEAVY QUARK PRODUCTION IN HADRONIC COLLISIONS Z. Belghobsi STUDY OF TANTALUM CARBIDES COATINGS Y. Hadjar and R. Halimi INFLUENCE OF TWINS ON THE VORTEX PINNING IN YBaCuO SINGLE CRYSTALS IN TILTED FIELD M. Boudissa, R. Halimi, K. Frikach, S. Senoussi. KINETICS OF THE CONVERSION OF SEMI-INSULATING GaAs TO p- TYPE AFTER HIGH TEMPERATURE ANNEALING A. Nouiri, A. Djamel

105 MAGNETIZATION CHARACTERISTIC OF Fe/Ag MULTILAYERS GROWN EPITAXIALLY ON MgO(001) F. Chemam, A. Bouabellou, M-F. Mosbah, R. Halimi CHARACTERIZATION OF METAL HYDROGENATED AMORPHOUS SILICON CONTACTS AS SCHOTTKY BARRIER AND THEIR ELECTRICAL BEHAVIOR UNDER HYDROGEN AND OXYGEN MOLECULAR GAS K. Laihem, R. Cherfi and M. Aoucher ELECTRICAL BEHAVIOUR OF HYDROGENATED AMORPHOUS SILICON DEPOSITED BY DC- MAGNETRON SPUTTERING AT HIGH TEMPERATURE AND HIGH RATE G. Farhi, R. Cherfi, M. Aoucher and K. Zellama OPTICAL INVESTIGATION OF THE STRUCTURAL PROPERTIES OF AMORPHOUS HYDROGENATED SILICON DEPOSITED BY DC-MAGNETRON SPUTTERING G. Farhi, R. Cherfi, M. Aoucher and K. Zellama

106 NITRATE ABSORPTION CONCENTRATION OF ROSA HYBRID SWEET PROMISE GROWN SOULLESS S. Bougoul, R. Brun & A. Jaffrin. IMPROVEMENT OF QUANTUM YIELD IN A SB DETECTORS BY EXCITATIONS OF SURFACE PLASMONS S. Zellag, A. Sellai, S. Saib LAPW CALCULATION OF THE PHYSICAL PROPERTIES OF THE METAL CARBIDES: TITANIUM CARBIDE T. Amriou and B. Bouhafs FIRST-PRINCIPLES CALCULATIONS OF OPTICAL PROPERTIES OF BULK SnTe Z. Nabi, and N. Amrane

107 ELECTRONIC AND OPTICALPROPERTIES OF THE SERIES OF PbX COMPOUNDS B.Abbar, Z.Nabi, N.Amrane, B.Bouhafs, A. Tadjer, and H. Aourag FP-LAPW Calculation of electronic and structural properties of TiC S. Méccabih, Z. Nabi, B. Abbar and N. Amrane FP-LAPW CALCULATION OF ELECTRONIC AND STRUCTURAL PROPERTIES OF TiN N. Benosman, Z. Nabi, B. Abbar and N. Amrane ELECTRONIC STRUCTURE CALCULATIONS FOR TIO USING THE FULL POTENTIAL LAPW METHOD F. Laksari, Z. Nabi, B. Abbar and N. Amrane OPTICAL AND ELECTRONIC PROPERTIES OF SiO 2 N. Abbouni, Z. Nabi, B. Abbar and N. Amrane COMPARATIVE ANALYTICAL STUDIES OF PARABOLIC AND RECTANGULAR QUANTUM WELL BASED ON Si/SiGe A. Benchikh, N. Amrane

108 QUANTUM MONTE CARLO INVESTIGATION OF EXCHANGE AND CORRELATION IN SILICON A. Kellou and N. Amrane In x Ga 1-x N STRUCTURE REFRACTIVE INDEX CALCULATIONS M. Annani, Z. Chama, M. Khadraoui, B. Bouhafs and N. Amrane REACTIVE OXYGEN SITES AT THE (001) V 2 O 5 SURFACE Christian Mathieu, Brahim Khelifa, Adlane Sayede and Hafid Aourag THE CALCULATION OF ELECTRONIC PROPERTIES OF FeSi 2 AND FeSi A. Laref and H. Aourag OSCILLATING, DECAYING, AND COLLAPSING SOLITONS IN THE GENERALIZED NONLINEAR SCHRÖDINGER EQUATION R. Moussa, S.Goumri-Said, and H.Aourag

109 MOLECULAR DYNAMICS SIMULATION OF CuI USING A THREE-BODY POTENTIAL W.Sekkal, A. Zaoui, A. Laref, M. Certier and H. Aourag DEVICE MODELING OF LIQUID CRYSTAL DISPLAY AND APPLICATION D. Sari, H. Aourag STUDY OF ELECTRONIC, ELASTIC, STRUCTURAL AND THERMODYNAMIC PROPERTIES OF CdTe AND ZnTe A. E. K. Merad, M. B. Kanoun, A. Laref, W. Sekkal, H. Aourag and G. Merad TIGHT-BINDING CALCULATIONS OF II-VI COMPOUNDS A. E. K. Merad, A. Laref, H. Aourag and G. Merad THEORETICAL STUDIES OF POSITRON ANNIHILATION IN GaAlN AND GaInN ALLOY SYSTEMS F. Benkabou, and H. Aourag POSTER SESSION B

110 DIELECTRIC PROPERTIES OF ZINC BLENDE GaN, InN AND AlN UNDER STRAIN A. Tadjer, M.Rezki, B.Abbar, and H. Aourag PROPRIETES ELECTRONIQUES, OPTIQUES ET STRUCTURALES DU SiC ET GeC S. Ait Abderrahmane and H. Aourag THE IONICITY CHARACTER OF III-V COMPOUNDS UNDER PRESSURE EFFECT Y. Al-Douri, H. Abid, and H. Aourag CARACTRISATION DES TRANSISTORS BIPOLAIRES A BASE DE GaN S. Mansouri, Z. Benamara, R. Brahimi, S. Nouar, B. Cruzza MONTE- CARLO CALCULATIONS OF KEV POSITRON SLOWING DOWN IN SOLIDS Z. Bousahla MODELISATION DES SYSTEMES PHYSIQUES PAR MATLAB F. Krim, Y. Mami, K. Driss-Khodja

111 CREUSEMENT THERMIQUE DANS LES COUCHES MINCES: APPLICATION DU MODELE DU CREUSEMENT THERMIQUE A UNE COUCHE MINCE DE SILICIUM POLYCRISTALLIN N. Benkhettou, B.Soudini & D.Rached APPROCHE DE LA PROBLEMATIQUE DU NON-LIQUIDE DE FERMI EN DIMENSION UN AU MOYEN DES THEORIES CONFORMES M. Doui-Aici, B.soudini & H.Abid STORED CHARGES ANALYSIS IN STRUCTURES OF FOUR-LAYER A. Hallouche ETUDE DE L'EVOLUTION DU NIVEAU DE FERMI SUPERFICIEL A L'INTERFACE DES DIODES SCHOTTKY Al/GaAs H. Mazari, Z. Benamara, N. Bachir Bouiadjra, O. Bonnoud STRUCTURAL AND THERMODYNAMIC PROPERTIES OF ZINC-BLENDE ZnSe BY MOLECULAR DYNAMICS SIMULATION F. Z. Aoumeur L'EFFET DES PIEGES SUR LES CARACTRISTIQUES ELECTRIQUES DES DIODES SCHOTTKY Au/InP (100) ET Au/InSb/InP(100) B. Akkal, Z. Benamara, A. Bouzidi, L. Bideux, B. Gruzza

112 ETUDE PAR LA METHODE DE LA DYNAMIQUE MOLECULAIRE DE DETECTEURS OPTOELECTRONIQUES DANS L'INFRAROUGE A BASE DU Si x Ge 1-x et du SiGe S. Berrah, M. Driz ANALYSIS OF THE DEGRADATION ON THE EXTERNAL SURFACES OF THE POLYMER MATRIX COMPOSITE BY THE OPTIMIZATION OF THE FIBBER ORIENTATION E. Bedia Adda, A. Tounsi, Z. Sereir, B. Boucham and H. Houari A MODEL FOR ANALYZING THE INTERFACE STATES EFFECT OF A MOS STRUCTURE H. Dib, Z. Benamara, A. Boudissa, F. Raoult, and O. Bonnaud EFFECT OF GRAIN SIZE AND GRAIN BOUNDARIES STATE DENSITY IN POLY-Si(N + /C-Si(P) SOLAR CELL USING FIRST-PRINCIPLES COMPUTER MODELING B. Zbentout, H. Sehil, A. Joti, H. Dib, H. Boudiaf, Y. Bourezig and Z. Benamara

113 Evaluation of The Size of The Plastic Zone in Mode I for Elasto-Plastic Behavior Material M. Benguediab, M. Belhouari, K. Madani and N. Ranganathan STUDY AND SIMULATION OF THE SPECTRALLY RESOLVED (SI-SPL) SCANNING PHOTOLUMINESCENCE APPLIED TO InAlAs/InP HETEROSTRUCTURE H. Gharib, T. Benbakhti, M. Derras ETUDE DE L'AMORPHISATION DE LA SURFACE DE Si(111) PAR BOMBARDEMENT IONIQUE ET DE LA REORGANISATION PAR RECUIT THERMIQUE A. Cheheb ETUDE DE L'EFFET DE RESONANCE DANS LES STRUCTURES A EFFET TUNNEL H. Khalfoun, F. Hamdache and N. Benharrats

114 VALENCE BAND STRUCTURE OF HgCdTe/CdTe STRAINED-LAYER QUANTUM WELL N. Mokdad, K. Zitouni, A. Kadri. Laboratoire de Micro-Opto-Electronique, Université d'Oran Es-Senia, Alg\'erie. HgCdTe is an important material for quantum well infrared (QWI) device technology. This material is used for a fabrication of a narrow strained layer quantum wells such as CdTe/HgCdTe/CdTe. In this study we use a H8x8 Luttinger-Kohn hamiltonian and the Pikus-Bir hamiltonian which take into account the strain effect. Using a unitary transformation and an axial approximation the H8x8 Luttinger is diagonalized on two 4x4 block matrix. We present numerical result for effective masses, confinement energies and valence band structure for a Cd mole fraction x leather than ( tension strain). We have shown that the coupling between the conduction and valence band play important role in mixing of the valence band and addition of strain reduce of light hole masse.

115 Strain effects on graded index separate confinements heterostructures (GRIN-SCH) M. Mattalah, K. Zitouni, A. Kadri MicroOptoElectronic Laboratory, University of Oran Es-Senia. We report a detailed examination of the biaxial strain effects on the electronic structure of Graded-index separate confinement heterostructures (GRIN-SCH) based on (Zn, Cd) Se wide band-gap II-VI seminconductors which are designed in the view of a blue-green light emission device. These heterostructures are constituted of a layer of a semiconductor compound having quite a large refractive indice embeddede between two thick layers of semiconductor compounds with lower refractive indexes. This leads to a significant enhancement of carriers and photons confinement. The valence subbands and confinement energies of the strained heterostructure are calculated within the enveloppe function approximation and the transfer-matrix formalism. Since the potential gradient is small in the GRIN regions, we have considered these regions as a perturbation in comparison with a standard square well problem. We obtain an important carrier confinement in the central quantum well of the GRIN-SCH structure under biaxial strain which affect the arrangement of the subbands. This result increase the transition energies. Therefore, this enhance the laser emission

116 CHARACTERIZATION OF QUATERNARY SEMICONDUCTOR MATERIALS H. Ait Kaci Institut de Physique, Université d'Es-Sénia, B.P 1524, Oran El M'Naouer (Algérie). U.S.T, Oran 'Mohamed Boudiaf' Bp 1505 El Menaour Oran not received

117 PHOTON SCANNING TUNNELING MICROSCOPY: THEORETICAL AND EXPERIMENTAL STUDY OF A BIDIMENSIONNEL GRATING H. Boutaleb *, A. Mamoun *,G. Bassou #, L. Salomon !!, F. De Fornel !! * Institut de Physique, Laboratoire d'Optique, B.P 1524, Oran El M'Naouer (Algérie). # Loratoire de Microscopie Electronique, UDL de Sidi Bel-Abbès (Algérie). !! LPUB Equipe Optique de Champ Proche, Faculté des Sciences Mirande, B.P Dijon Cedex (France). Many theoretical and experimental works on the near field optic microscopy have been achieved with objective the improvement of the optic microscopes in far field. During this last decade, a new type of optic microscope was developed, whose principle is founded on the analysis of the near field given out by the studied object. This detection in near field allows to throw off a limitations owed to the phenomenon of diffraction and the last devices constructed permit to reach a resolution of the order of [1]. The Photon Scanning Tunnel Microscope (P.S.T.M.) makes part of this new type of microscope [2-4]. His principle consists in illuminating the sample in total reflection and collect the transmitted photon flux by a tapered optic fibre. By displacing this tip probe in front of the surface of the sample, it is possible to construct a set of lines from of which one hopes to determine the roughness of the object [5]. However, of the fact of its novelty, mechanisms governing the formation of a P.S.T.M picture. are not clarified perfectly. In order to overcome to this mechanisms, it is necessary to know what the optic fibre captures during its scanning and to control the interaction between this one and the evanescent field. then, we suggest to study some calibrated samples tests. In this work, we study by using the differential

118 method [6-8], the diffraction of light by a bidimensionnel grating (2D) and we compare results obtained with the experimental results achieved with the help of a P.S.T.M. REFERENCES: [1] : D. W. Pohl, W. Denk, M. Lanz, Optical stethoscopy : image resolution with, Appl. Phys. Lett. 44, 651 (1984). [2] : R. C. Reddick, R. J. Warmack, T. L. Ferrell ''New form of scanning optical microscopy'', Phys. Rev. B 39, 767 (1989). [3] : D. Courjon, K. Sarayeddine, M. Spajer ''Scanning Tunneling Optical Microscopy'' Opt. Commun., 71, 23 (1989). [4] : F. de Fornel, J. P. Goudonnet, L. Salomon, E. Lesniewska, ''An evanescent field optical microscope'', Proc SPIE 1139, 77 (1989). [5] : Frédérique de FORNEL, ''Les ondes évanescentes en optique et en optoélectronique'' Editions EYROLLES octobre [6] : R. PETIT in '' Electromagnetic theory of grating '' Ed. Spinger, Verlag, Berlin [7] : R. Petit: Rev. Opt. 8, 353 (1966). [8]: M. Neviere, P. Vincent, R. Petit: Nouv. Rev. Opt. 5, 65 (1974).

119 MODELISATION DES SYSTEMES PHYSIQUES PAR MATLAB F. Krim, Y. Mami, K. Driss-Khodja Laboratoire de Physique de la Matière Condensée Département de Physique Faculté des Sciences Université d'ORAN Es-Senia Matlab est un environnement complet pour le calcul scientifique et technique regroupant puissance de calcul, visualisation et bibliothèques de fonctions, ce dont nous avons besoin pour résoudre les problèmes techniques les plus complexes. Il possède aussi son propre langage de programmation, qui, naturel, permet d écrire les programmes bien plus rapidement qu'en C ou qu'en Fortran. Avec Matlab, nous pouvons rapidement et facilement traiter les données, sans aucune limitation de taille, et évaluer les modèles les plus complexes. C'est également plus de 500 fonctions mathématiques, scientifiques et techniques qui fournissent toute la puissance de calcul dont nous avons besoin. Matlab s'intègre avec d'autres environnements. Nous pouvons lier dynamiquement Matlab à des programme C ou Fortran, changer des donnes avec d'autres applications ou utiliser Matlab comme moteur d'analyse et de visualisation. Les boites outils Matlab sont le produit de recherches pointues en sciences et ingénierie. Elles apportent des fonctionnalités de très haut niveau dans nombre de domaines, tels que le traitement du signal, l'automatique et la modélisation mathématique. Elles nous permettent également d'associer les techniques les plus innovantes dans le même environnement de travail. Nous pouvons modéliser rapidement, sous forme de schéma bloc, les systèmes linaires, non linaires et hybrides, évoluant en temps discret ou continu. De plus, de très nombreux blocs que nous pouvons positionner et lier pour construire nos modèles, sont fournis.

120 ETUDE DE L'EFFET DE RESONANCE DANS LES STRUCTURES A EFFET TUNNEL H. Khalfoun, F. Hamdache and N. Benharrats Laboratoire de physique, electronique du solide, Université des sciences et techniques, Oran Dans cette étude une comparaison entre les performances des structures symétriques Double-Barrière (D.B) et triple barrière (T.B), ainsi que l étude des conditions de convergence est réalise. Par le formalisme de la matrice de transfert et les conditions de continuité de Bastard, le comportement d'une particule 'incidente quasi libre' de masse effective m* travers ces deux structures symétriques est tudi. Il apparat partir des vitesses de transmission la résonance. La vitesse représente une grandeur dynamique qui traduit lefficacité de la structure conduire que la structure T.B est largement plus compétitive que la structure D.B. Nous nous intéressons l'effet du couplage agissant en tant que perturbation sur les états appartenants des puits isolés. En absence de forme analytique de la perturbation w(x), il nous est possible d évaluer les taux de recouvrement w ij entre les deux états non perturbés et. Le processus de transfert de charge dépend du taux de recouvrement. Une étude plus détaille sur w ij et des états résonnants E r en fonction des paramètres structuraux 'a' et 'b' qui représentent respectivement la largeur du puits et l épaisseur de la barrière nous permettra de déterminer la vitesse de transmission la résonance, la nature de l'onde électronique ainsi que la structure optimale pour laquelle la probabilité de transmission par effet tunnel résonnant est la plus importante.

121 LES ALGORITHMES REVERSIBLES DANS LE TEMPS ET LA DYNAMIQUE MOLECULAIRE N. Tchouar Institut de Chimie Industrielle, U.S.T, Oran'Mohamed Boudiaf' Bp 1505 El Menaour Oran Les méthodes d'intégration des équations de mouvement d'un système de référence ne sont pas réversibles dans le temps et manifestent un caractère instable dans les temps larges. La factorisation de trotter du propagateur de Liouville est utilise pour gnrer les nouveaux intégrales réversibles dans la dynamique moléculaire. Cette stratégie est applique pour driver les algorithmes propagateurs réversibles d'un système de référence (R.E.S.P.A). Ces nouveaux algorithmes accélèrent la simulation des systèmes, sont réversibles dans le temps et sont plus stables que les algorithmes standards connus. Dans ce travail, nous allons présenter le formalisme de l'opérateur de Liouville, la factorisation de Trotter du propagateur classique qui peut être utilise pour dériver des intégrales simples. Nous allons montrer que ces méthodes d'intégrations peuvent êtres utilises pour accélérer l'intégration des équations de mouvement des systèmes en contact avec le thermostat de Nos. Ensuite, nous allons driver les équations de mouvement pour un ensemble NPT en appliquant le principe d'Anderson. Finalement, une comparaison a t faite avec un algorithme standard de Leap-Frog et un algorithme propagateur réversible en étudiant toutes les propriétés thermodynamiques, structurales et de transport d'un système de Lennard-Jones : Méthane Liquide. Le but de cette comparaison est de tester la rapidité et la précision d'un algorithme réversible dans le temps.

122 OPTICAL PROPERTIES OF ACTIVATE LASER (F 2 + )H CENTRES IN NaCl CRYSTALS DOPED WITH HYDROXIDE IONS E. Boulma Laboratoire de Cristallogénése et Spectroscopie Institut de Physique B.P. 12 Université de Annaba 23000, Annaba-Algérie. Key Words : Laser; color centre; absorption; emission. During the past few years color centers in alkali halides have received renewed attention because of the usefulness as laser-active centre in the near infrared (IR). Furthermore, the F2+ centre ( two anion vacancies binding one electron) has show a high quantum efficiency, and can be produced in any alkali halide host covering the emission range from 1 to 3 (m [1]. These color centers are also characterized by small stock shift and very low pumping threshold (of about milliwatt) which allowed to obtain laser emission using incoherent laser emission source (e.g. decharge tubes ). However these centers are unstable under pumping light and for low temperatures. Therefore, our work is focused on ways of making these centers more stable under light effects, by doping with adequate impurities. For this, NaCl doped by impurities OH- with different concentrations, is studied in order to study the effect of these ions on additive coloration, effectively, NaCl crystals doped up to 200 PPM with OH- impurities. So the increase in ion impurities concentration disappears the F centre which replaced by O2- centers. The coloured crystals have given two varieties of (F2+ )H centers with significantly different absorption and emission wavelength. The variety (a) obtained by irradiation at near room temperature (RT) and metastable at liquid nitrogen temperature (LNT), but the second variety (b) is obtained by light irradiation (365 or 436 nm) at 77K and it can convert to variety (a) at room

123 temperature (298K). [1]- L. F. Mollenauer and D. H. Olson J. Appl. Phys., 46,

124 COMPUTED DECONVOLUTION OF ABSORPTION SPECTRA OF ACTIVE LASER MATERIALS : CARBONATE-, AND SODIUM-DOPED ALKALI HALIDE CRYSTALS K. Labbaci Institut de physique, Université de Annaba, B.P. 12 Annaba, Algérie. Not Received.

125 MONTE CARLO SIMULATION OF THE TRANSPORT OF SLOW POSITRON IN ALUMINIUM S. Saib, H. Latelli, S. Zellag and N. Bouarissa Department of Physics, University of M'sila, , Algeria Accurate modeling of motion of charged particles through solids is important many areas of material science, solid-state physics and microelectronics. All technique using positron beams and techniques using electrons beam and as the primary beam striking a target or in which electrons emitted from the target constitute the measured signal require knowledge of the interaction of positrons or electrons with the sample under study. The Monte Carlo simulation technique in which the particle trajectories are modeled as random walks, has been widely used in this field because it takes into account the complexity of the trajectories of the particles through the solid, as they suffer scattering events, in an accurate and transparent way. The accuracy of Monte Carlo method depends crucially on the modeling of the scattering processes employed in the simulations. The scattering process depend on the particle energy, but in the energy range between KeV, which we are concerned with here, the dominant processes are elastic scattering off the individual atoms and inelastic scattering involving core and valence electron excitations. The inelastic processes associated with the slowing down of particles penetrating solid surface have been subject to investigation for decades. In this work we show that the implantation of the RPA dielectric model which we use for the description of inelastic processes and the modified Rutherford formula in Monte Carlo transport simulation produces a good agreement with experiments, for backscattering positrons from a

126 Aluminum target. Then we interpolate the backscattering fraction as a function of energy by the formula: (1) Where a and b are the fit parameters, proposed by Bouarissa instead of: (2) Usually utilized in literatures, which has three parameters a, b and c.

127 WELDED STEEL CRACKING H. Zedira and A. Boumaaza Institut de mécanique, Centre Universitaire d'Oum El Bouaghi, 04000, Algérie Descriptors : Steel, Welding, Cracking, Weld, bead, Monobloc, Mechanical shovel, Structures, Phases, Martensite, Ferrite, Cementie. When an engineer would like to make a structural design, he can find out various materials. How can he make a choice ?Our study of welded steel cracking phenomena in the mechanical elements of the mechanical shovels 9210 produced in the CGP-ENMTP factory, which is situated near the city of Constantine is motivated by a lot of cracking case of the welded monoblocs find out from The principal object of our investigation is to find out how the cracks occurs into the welded joints, to make a scientific analysis and after that we can give a solution to obtain high quality welded joints. In this paper, we study also the operator, metallurgical and constructive weldability. At the end we will give the experimental results taken at the factory laboratory.

128 RBS-CHANNELLING STUDY OF ANTIMONY IMPLANTED SI(100) R. Labbani and R. Halimi Unité de Recherche de Physique des Matériaux et Applications. Université Mentouri de Constantine, Route de Aïn El Bey, Constantine, Algérie. The aim of the present work is to investigate Sb+ ions behaviour into Si(100) substrates during annealing treatments. Two doses of antimony dopant (5(1014 or 5(1015 Sb+.cm-2) are chosen with an implantation energy of 60 keV. The samples are annealed under oxygen atmosphere at 900C, 30min. A part of these specimen is introduced into a solution of 10\%HF in order to remove SiO2 oxide layer on the surface. Analysis of two kinds of samples (with and without SiO2 oxide layer) is carried out by means of channelling Rutherford Backscattering Spectrometry (RBS). It is established that the surface peak width increases with the rise of antimony dose. This phenomenon is more important in oxided specimen. Moreover, in the case of cleaned samples, a redistribution of antimony ions towards samples free surface is observed (for 5(10 15 Sb +.cm -2 dose) and the fraction of Sb+ that is shadowed is more significant.

129 HIGHER TWIST EFFECT AND (T-EFFECT IN A HEAVY QUARK PRODUCTION IN HADRONIC COLLISIONS Z. Belghobsi Département de physique théorique, Université de Constantine, Constantine, Algérie The higher twist effect for a heavy quark production in hadronic collisions is studied and its contribution is calculated. It has shown that this effect gives a yield as important as the first higher order radiative corrections.

130 STUDY OF TANTALUM CARBIDES COATINGS Y. Hadjar 1 and R. Halimi 2 1 Institut des sciences exactes, Université de Batna, 05000, Batna, Algérie 2 Unit. de recherche de physique des matériaux et applications, Université Mentouri de Constantine, 25000, Constantine, Algérie. The aim of the present work is to study the Kinetic of formation and growth of tantalum carbides between e-gun beam evaporated tantalum thin layers, ~4(m thick and steel substrates containing about 1( Wt of carbon. The samples (Ta/steel) have been exposed to 1-h vacuum annealing in the temperature range C. The effects of annealing on the phases formed, decomposition and also their purity have been investigated in the considered temperature range using X-ray diffraction, Secondary ion mass spectroscopy (SIMS) and X-ray microprobe analysis. It is found that at annealing up to 900C the compounds Ta2C, and TaC are forms. During the subsequent heat treatment from 900C to 1100C the final TaC phase grows at the expense of the Ta2C and phases. Furthermore, iron and some other element impurities were detected in the monocarbide film at high temperature.

131 INFLUENCE OF TWINS ON THE VORTEX PINNING IN YBaCuO SINGLE CRYSTALS IN TILTED FIELD M. Boudissa 1, R. Halimi 2, K. Frikach, S. Senoussi 3. 1 Université de Setif, Institut de Physique, Algérie. 2 Université de Constantine, Unit. de recherche de Physique des matériaux. 3 Université de Paris-Sud, Laboratoire de Physique Des Solides, Orsay, France. In the present study, we present a systematic study of twinned and detwinned YBCO crystals at temperature ranging from 4.2K to 90K, magnetic fields up to 6T and at various angles between the applied field and the c-axis. Comparison between data for the twinned and detwinned samples showed clearly the effect of twin pinning in the intermediate and high temperature region. By varying the angle of the twin planes with the magnetic field we have found that vortices lock-in to the twin planes. Pinning takes place only for magnetic fields aligned within a critical angle ( of the twin boundary plane. With the increase of the tilt angle (, the influence of twins decreased. The observed changes in (M (H) are qualitatively similar to that produced by detwinned samples. The values of the trapping angle were estimated at low and intermediate temperature. Finally, an attempt is made to describe the possible mechanisms governing these phenomenon.

132 KINETICS OF THE CONVERSION OF SEMI-INSULATING GaAs TO p-TYPE AFTER HIGH TEMPERATURE ANNEALING A. Nouiri, A. Djamel Laboratoire de Physique des Solides. Université de Constantine, Constantine 25000, Algeria. A study of the kinetics of the conduction conversion of (SI) GaAs at high temperature annealing above 800C has been made. It is shown that (SI) GaAs crystals are converted to p-type. This phenomenon is essentially attributed to concentration reduction of EL2centers and generation of acceptor defects. The present analysis which is focused on the kinetics of the conversion indicates that the acceptor concentration increases with increasing annealing temperature and time. According to this process, and starting from measured values of the migration enthalpy, it is clearly shown that both Gallium vacancy (VGa) and antisite Ga(aAs) play an important role in the dissociation of the EL2 center.

133 MAGNETIZATION CHARACTERISTIC OF Fe/Ag MULTILAYERS GROWN EPITAXIALLY ON MgO(001) F. Chemam 1, A. Bouabellou 2, M-F. Mosbah 2, R. Halimi 2 1 Institut des Sciences Exactes et de Technologie, Centre Universitaire de Tebessa (12000) 2 Unité de Recherche de Physique, Université de Mentouri, Constantine (25000). The magnetic properties of well characterized Fe (001)/Ag (001) superlattices prepared by molecular beam epitaxy have been studied. The epitaxial growth and the quality-layered structure of the samples have been controlled by RHEED and X-ray diffraction techniques. Magnetic Hysteresis loops measured by Vibrating Sample Magnetometer (VSM) at 4.2k with the magnetic field applied parallel and perpendicular at plane film. The anisotropy calculations obtained from the magnetic hysteresis loops of the samples indicate the presence of parallel anisotropy and the dependence of Ks with the Ag thickness.

134 L'EFFET DE L'ATOME NEUTRE DE ZINC SUR LES PROPRIETES ELECTRONIQUES DES COUCHES D'OXYDE DE ZINC R. A. Rabadanov *,T. Filiachi ** * Lab. Des couches minces, Université de Dagestan, Dagestan, Russie ** Institut d'Electronique, Université de Biskra, Biskra 07000, Algérie. Mots clés : Oxyde de zinc, Défaut ponctuel, Energie d'ionisation, propriétés électrophysiques. En plus des défauts ponctuels déjà étudiés dans le ZnO, dans notre travail on note aussi la présence d'atomes neutres de zinc et on étudie leur influence sur la coloration des échantillons. Aussi, on montre qu'effectivement l énergie d'ionisation des centres donneurs diminue avec l'augmentation de la concentration des donneurs au-delà de 1017 cm-3.

135 CHARACTERIZATION OF METAL HYDROGENATED AMORPHOUS SILICON CONTACTS AS SCHOTTKY BARRIER AND THEIR ELECTRICAL BEHAVIOR UNDER HYDROGEN AND OXYGEN MOLECULAR GAS K. Laihem, R. Cherfi and M. Aoucher Laboratoire des Couches Minces et Semiconducteurs, Institut de Physique, USTHB, BP 32, El Alia, Bab-Ezzouar, Alger, Algérie. The electrical contact between a metal and semiconductor has aroused many theoretical and experimental works to determine the electrical properties of the junction. The metal hydrogenated amorphous silicon contact still not well known at now. Because of complexity introduced by the amorphous material. The junction between the metal and amorphous semiconductor induce also an interface stability. However, the defects present in the interface of the metal/hydrogenated amorphous silicon, play an important role in the exchange of electrical charges.

136 ELECTRICAL BEHAVIOUR OF HYDROGENATED AMORPHOUS SILICON DEPOSITED BY DC- MAGNETRON SPUTTERING AT HIGH TEMPERATURE AND HIGH RATE G. Farhi, R. Cherfi, M. Aoucher and K. Zellama Laboratoire des Couches Minces et des Semi-conducteurs Institut de Physique, USTHB,BP32, Bab-Azzouar, El-Alia, Alger, Algérie. The structural properties and the sensitivity to light exposure of hydrogenated silicon thin films are most important characteristics for this type of materials. The high deposition temperature is one of the methods that promise good structure stability, however it affects strongly the hydrogen contain in the matrix. This leads to a less sensitivity to light exposure. Because the hydrogen presence in the silicon layers is necessary to passive the defect in the amorphous material and then to perform for photoconductivity properties. In this work we report some results obtained on hydrogenated amorphous silicon (a-Si:H) deposited by CD magnetron sputtering at high rate between 15 and 20 A/s and at high temperature between 500 and 600 C. The film thickness is between 2 and 3 (m. Electrical and optical methods are used to investigate the deposited films.

137 OPTICAL INVESTIGATION OF THE STRUCTURAL PROPERTIES OF AMORPHOUS HYDROGENATED SILICON DEPOSITED BY DC- MAGNETRON SPUTTERIN G. Farhi, R. Cherfi, M. Aoucher and K. Zellama Laboratoire des Couches Minces et des Semiconducteurs Institut de Physique, USTHB,BP32, Bab-Azzouar, El-Alia, Alger, Algeria. Laboratoire de Physique de la Matière Condense Faculté des Sciences, Université de Picardie Jules Verne 33, Rue Saint-leu, Amiens Cedex, France Amorphous hydrogenated silicon (a-Si:H) layers were deposited by DC magnetron sputtering on Corring 7059 substrates. The deposition rate is about 15 A/s. In this paper, the structural properties, which strongly depend on the growth conditions and especially on the temperature substrate, were investigated by photothermal deflection spectroscopy (PDS) and optical transmission in the range 450nm-2500nm. We note that these methods complement one another. In the lower energy range ( eV), we can extract from the PDS technique the gap defect density (Nd) and the Urbach tail (E0). The optical transmission, used in the higher energy range ( eV) permits the determination of the optical gap (Eg) and the refraction index (ns). In the intermediate range ( eV), the results of the both techniques are well overlapped. The Eg of our material determined by the both methods, is around 1.7eV and ns is about 3.3. The lower values of are found for the layers deposited at 300C and 550C. Effectively, for this two temperature ranges, Nd is found about 5*1016 and E0 less then 65 meV. Electrical measurements are done over temperature range between 77K and 500K. The dark conductivity '(d' shows a linear

138 variation in the Arrhenius representation, we have obtained an activation energy values around 0.8eV. The photoconductivity ratio '(ph/(d' at 300K is higher than 104. The results obtained by the optical investigations shows good qualities of the materials. This was comforted by the electrical measurements.

139 NITRATE ABSORPTION CONCENTRATION OF ROSA HYBRID SWEET PROMISE GROWN SOULLESS. S. Bougoul, R. Brun & A. Jaffrin. URTH-INRA Routedes Colles; Biot. Recent measurements of transpiration rates and nitrate intakes of young rose plants grown in NFT are confronted with existing models. The water demand is accurately reproduced by the passive leaf evaporation process described by Penman and Monteith (PM model). The mineral demand is tentatively described by Scaife's Pump-Leak-Buffer (PLB) model. The PLB model predicts for rose plants, contrary to ray grass, little phase shift between mineral-absorption and solar radiation; as a consequence, it exclude memory effects from the previous day. But some observed features are not accounted for: the saturation of nitrate reduction rate for high solar radiation, the inhibition of root mineral absorption at high temperature. A modified PLB model (MPLB) is thus proposed, which accurately reproduces nitrate uptake fluctuations under strongly varying climatic conditions. Combination PM and MPLB models gives access to a modeling of the instantaneous absorption concentration of nitrates in rose plants. It should then be feasible to manage in real time the composition of the root medium used in soulless cultures, so that neither saline stress nor mineral carency could alter the plant growth.

140 EFFET DES PARAMETRES ELECTRIQUES DE LA JONCTION SUR LE VOLUME D'INTERACTION ELECTRON-MATIERE M. Derras 1, A. Kadoun 2, G. Bassou 2, H. Gharib 2 1 Centre de développement des techniques nucléaires (CDTN), Alger. 2 Laboratoire de microscopie électronique, Université de Sidi Bel Abbes. Notre simulation par la méthode de Monté-Carlo, consiste à calculer les trajectoires des électrons primaires au sein de la cible. L'intérêt de cette technique est pouvoir simuler individuellement les divers interactions de l électron avec le matériau. Le principe correspond à une méthode de tirage statistique d événement. Chaque électron pénétrant dans la cible subit au cours de sa trajectoire, une succession d événement de type \'{e}lastique ou inélastique, ce dernier donnant lieu plusieurs \'{e} parmi lesquelles l émission électronique. Suite à un choc, la direction de l électron primaire et éventuellement son énergie sont modifies. Entre deux événements, la moyenne du trajet rectiligne est dite ''libre parcours moyen'' (noté(e). Dans ce travail nous nous intéressons à une utilisation de ce model de calcul pour la détermination de l'effet des paramètres électrique de la jonction sur le volume d'interaction électron-matière.

141 IMPROVEMENT OF QUANTUM YIELD IN A SB DETECTORS BY EXCITATIONS OF SURFACE PLASMONS S. Zellag, A. Sellai, S. Saib Université de Blida, Institut de TCT Our aim is to improve the quantum efficiency of SB detectors in infrared region. In the present work we have in first used SPs excitation based on optical method R-T-A to obtain an important optical absorption in IR region. For example a prism-air gap (800nm)-PtSi (8nm)-Si device will give an absorption of 25% due to SPs enhancement at (=3000nm. In second we have developed a computer program using Monte Carlo calculations. The probabilistic behavior of this method permitted to study hot holes motion. Calculations and studies of quantum yield are related to values of many variable parameters, which are free paths of hole-hole scattering and hole-phonon scattering and less per hole-phonon collision and others. We have obtained a change in the quantum yield from 3% to 8% for PtSi/Si at =3000nm.

142 EVOLUTION D'UNE STRUCTURE DUAL-PHASE A PARTIR D'UN ACIER DISPERSOIDE X60 S. Zidelmel & M. Hadji Département des Sciences des Matériaux, Institut de Mécanique, Université de Blida, B. P 270, Route de Souma, Blida. L'entreprise de sidrurgie ENSIDER produit, sous forme de tles obtenues par laminage contrl, des aciers dispersions de nuance X60, destins la fabrication des pipelines utiliss par la SONATRACH. Un acier X60 (0.12\%C-1.49\%Mn-0.036\%Nb-0.04\%V) atteint sa rsistance essentiellement par le raffinement du grain, et le durcissement par prcipitation qui rsulte de l'addition des lments dispersions. Cependant l'exception du raffinement du grain, la plupart des procds utiliss pour augmenter la rsistance ont tendance diminuer la ductilit. Un des chemins suivis pour surmonter ce problme est de dvelopper des aciers plusieurs phases dans lesquelles les constituants sont responsables pour les diffrentes exigences des proprits mcaniques. L'exemple typique d'un acier plusieurs phases est l'acier dual-phase.

143 LAPW CALCULATION OF THE PHYSICAL PROPERTIES OF THE METAL CARBIDES: TITANIUM CARBIDE Z. Dridi, T. Amriou and B. Bouhafs Computational Physics Laboratory, Physics Department, University of Sidi-Bel-Abbes, Sidi-Bel-Abbes, Algeria. Titanium carbide (TiC) is a ceramic material with many applications in key high technologies, from mechanical to chemical and microelectronics. Titanium carbide also has a high melting point, high hardness, high electrical conductivity, high chemical and thermal stability, high wear resistance, and high solvency for other carbides. It can be used as a substitute for tungsten carbide, a common machining material. Titanium carbide is also used in coated steel press tools, grinding wheels, wear-resistant coatings, high- temperature heat exchangers, magnetic recording heads, turbine engine seals, and bulletproof vests. Titanium carbide and carbonitride are also utilized in the production of SiC-TiC, Si 3 N 4 -TiC, and Al 2 O 3 -TiC and ZrO 2 -Ti(C,N) composites. For all these applications, the investigation of the structural and electronic properties of titanium carbide is of great importance. This research deals with a novel theoretical analysis, based on a self-consistent calculation using the linearized augmented plane wave method (LAPW). Our results is used to test the applicability of this method for studying related advanced ceramic materials (e.g. WC, TiN, TiB 2, Si 3 N 4, and ZrC.)

144 FIRST-PRINCIPLES CALCULATIONS OF OPTICAL PROPERTIES OF BULK SnTe Z. Nabi and N. Amrane Positron Physics Laboratory, Physics Department, University of Sidi-Bel- Abbes, Sidi Bel Abbes, Algeria. The electronic structure, the charge-density distribution, the density of state and the total energy of SnTe in the rocksalt structure are studied by the self-consistent full potential linear-augmented-plane-wave method (FLAPW) within the local (spin) density approximation (LSDA). For the ground-state properties, the band structures, the equilibrium lattice constant, the bulk modulus and its derivative, are in good agreement with other recent calculations and with experimental data. In particular, the energy bands obtained are in very good agreement with the pressure dependence of the forbidden gap. Reasonably good agreement is obtained between our calculated effective masses and the experimentally determined ones. The linear optical properties of this compound are also calculated and compared with the available measurements. The calculated dielectric function is also in good agreement with the reflectance data.

145 ELECTRONIC AND OPTICAL PROPERTIES OF THE SERIES OF PbX COMPOUNDS B.Abbar *, Z.Nabi *, N.Amrane *, B.Bouhafs §, A. Tadjer #, and H. Aourag # * Positron Physics Laboratory, Faculté des Sciences, Université de Sidi-Bel-Abbes § Computational Physics Laboratory, Physics Department, University of Sidi Bel-Abbes, Sidi Bel-Abbes 22000, Algeria. # Computational Materials Science Laboratory, Physics Department, University of Sidi Bel- Abbes, Algeria. Using the self-consistent full potential linear-augmented plane-wave method (FP-LAPW) within the local spin density approximation (LSDA), the electronic structures and the linear-optical properties of PbS, PbSe and PbTe are investigated. Results on band structures, and density of states are presented and compared. Optical properties of PbX (X=S, Se, Te) are calculated and the dielectric functions are resolved into components perpendicular and parallel to the z axis. The calculated results are compared with the available experimental data. The structural properties of the PbX are also studied by means of local-density total-energy calculations. It is shown that the calculated equilibrium volume and the bulk modulus are in good agreement with recent experimental data.

146 FP-LAPW Calculation of electronic and structural properties of TiC S. Méccabih, Z. Nabi, B. Abbar and N. Amrane Positron Physics Research Laboratory, Physics Department, University of Sidi-Bel-Abbes, Sidi-Bel-Abbes, Algeria. We have studied the electronic properties of TiC by means of accurate first-principles total-energy calculations using the Full Potential Linear Augmented Plane Wave (FP- LAPW). The calculations are based on the density functional theory. The complete band structure and density of state of this compound have been shown. A good agreement with other workers was observed.

147 FP-LAPW CALCULATION OF ELECTRONIC AND STRUCTURAL PROPERTIES OF TiN N. Benosman, Z. Nabi, B. Abbar and N. Amrane Positron Physics Research Laboratory, Physics Department, University of Sidi-Bel-Abbes, Sidi-Bel-Abbes, Algeria. We have studied the electronic and structural properties of TiN by means of accurate first- principles total-energy calculations using the Full Potential Linear Augmented Plane Wave (FP-LAPW). The calculations are based on the density functional theory. The calculated values for the equilibrium volume and bulk modulus are generally in good agreement with the available experimental data and other recent calculations.

148 ELECTRONIC STRUCTURE CALCULATIONS FOR TIO USING THE FULL POTENTIAL LAPW METHOD F. Laksari, Z. Nabi, B. Abbar and N. Amrane Positron Physics Research Laboratory, Physics Department, University of Sidi-Bel-Abbes, Sidi-Bel-Abbes, Algeria. The class of refractory transition metal compounds is of great interest both in technology and in theory. This is because they exhibit an unusual combination of physical and chemical properties. In the present work we have performed the self-Consistent ban,d structure calculations for TiO using the linearized augmented plane wave method (LAPW) which has proven to be one of the most accurate methods for the computation of the electronic structure of solids within density functional theory.

149 OPTICAL AND ELECTRONIC PROPERTIES OF SiO 2. N. Abbouni, Z. Nabi, B. Abbar and N. Amrane Positron Physics Laboratory, Djillali Liabes University. The electronic structure and density of states have been calculated using the full potential linearized augmented plane wave method. Total and partial densities of states, as well as electron densities are presented and discussed in context with available theoretical data. Compared with other calculations good agreement was observed.

150 COMPARATIVE ANALYTICAL STUDIES OF PARABOLIC AND RECTANGULAR QUANTUM WELL BASED ON Si/SiGe A. Benchikh, N. Amrane Positron Physics Research Laboratory, Physics Department, University of Sidi-Bel-Abbes, 22000, Algeria. Les techniques modernes de croissance des cristaux semi-conducteurs que sont l épitaxie par jet moléculaire (MBE) et le dépôt en phase vapeur a partir d'organo- métallique (MOCVD), permettent de réaliser des hétérostructures constituées par la juxtaposition de couches de matériaux différents. Leurs propriétés très intéressants sont techniquement riches de promesses. Notre étude consiste à faire un calcul analytique au centre de la zone de Brillouin dans la direction longitudinale avec approximation de la masse effective sur les structures non contraintes de type I de potentiel rectangulaire et parabolique à base de Si/SiGe. Les résultats obtenus montrent l évolution des états confinés des sous-bandes de valence et de conduction et la distribution de la densité de probabilité.

151 QUANTUM MONTE CARLO INVESTIGATION OF EXCHANGE AND CORRELATION IN SILICON A. Kellou and N. Amrane Positron Physics Laboratory, University of Sidi Bel Abbes. The exchange and correlation energy of silicon is investigated with quantum Monte Carlo method. The Standard tool computational of electronic structure theory for solids is the local density approximation (LDA), within density functional theory (DFT). This has been applied successfully to systems, including those with quite rapidly varying densities, even though the LDA is based on approximating the system as locally homogeneous. However, when discrepancies between experiment and theory in solids arise it is difficult to improve upon the LDA systematically, although several schemes have been devised. In this paper, we compare our QMC calculations with those obtained from LDA and ADA (average density approximation) calculations. There are tow zero-temperature methods used in this work, variational Monte Carlo (VMC) and diffusion Monte Carlo (DMC), both based in stochastic schemes to sample the total wave function of the system. We review the coupling-constant-integrated pair correlation function, the exchange correlation hole, and the exchange-correlation energy density of diamond structure silicon. Finally, QMC results have corrected the LDA errors and are less sensitive to numerical noise, which appear in the exchange and correlation densities, QMC methods are thus immediately applicable to solids, molecules and atoms with appropriate wave function and exchange correlation functional.

152 In x Ga 1-x N STRUCTURE REFRACTIVE INDEX CALCULATIONS M. Annani 1, Z. Chama 1, M. Khadraoui 1, B. Bouhafs 2 and N. Amrane 3 1 Laboratoire de Modélisation des Composants et de Conception des Circuits, Institut d'Electronique. 2 Computational Physics Laboratory, Physics Department, University of Sidi Bel-Abbes, Algeria. 3 Laboratoire de Physique des Positrons, Institut des sciences Exactes. Université Djillali Liabes de Sidi-Bel Abbès. BP89,22000 Sidi-Bel Abbès. Algeria. Keywords: III-N semiconductors, Crystal growth, Refractive index, Empirical models. The growth of In x Ga 1-x N wurtzite structure is a well-established fact, in order to develop optoelectronic laser or LEDs, from the near ultraviolet to the light spectrum. This sweeps practically the whole of the visible spectrum and thus is very useful in actual development of rather liquid crystal displays screens. Nevertheless, refractive index of In x Ga 1-x N structure has not, at our knowledge, been investigated. These index are going naturally from the GaN index to the InN one, with, therefore a bowing due to the lattice mismatch between these two constituting binary alloys. The index in a certain range is less than the GaN one.

153 REACTIVE OXYGEN SITES AT THE (001) V 2 O 5 SURFACE Christian Mathieu *, Brahim Khelifa *, Adlane Sayede 1 and Hafid Aourag 1. * Université d'Artois - Faculté Jean Perrin - SP Cedex - France. 1 Computational Materials Science Laboratory, UDL Sidi Bel Abbes Algérie. Keywords : Vanadium oxide, scanning probe microscopy, quantum chemical caculation. The role of the three of oxygen present at the (001) V 2 O 5 surface: vandyl oxygen atoms O 1 coordinated only to one vanadium atom, O 2 and O 3 coordinated to two or three vanadium atoms respectively, is discussed through expirimental results and chemical calculations.

154 THE CALCULATION OF ELECTRONIC PROPERTIES OF FeSi 2 AND FeSi A. Laref and H. Aourag Computational Material Science Laboratory, University of Sidi-Bel-Abbès, Algeria Mettalic silicides play an increasingly important role in the fabrication of microelectronic devices, due to their large compatibility with silicon integration technology. In the past five years, however, particular attention has been devoted to iron silicides, since there exists one semi-conductor stable phase, namely FeSi 2, which could be employed for optoelectronic devices. We present in this communication the electronic properties of metallic FeSi and of FeSi 2 in the calcium-fluorite structure.

155 OSCILLATING, DECAYING, AND COLLAPSING SOLITONS IN THE GENERALIZED NONLINEAR SCHRÖDINGER EQUATION R. Moussa, S.Goumri-Said, and H.Aourag Computational Materials Science Laboratory, Physics Department, University of Sidi Bel- Abbes, Algeria. We have investigated numerically the long -term dynamics of unstable solitons in the generalized nonlinear Shrödinger (NLS) equation. An analytical model for the instability- induced evolution of the soliton parameters is derived in the framework of the perturbation theory, which is valid near the threshold of the soliton instability. As an exemple we analyze solitons in the NLS-type equation with two power-law nonlinearities.

156 MOLECULAR DYNAMICS SIMULATION OF CuI USING A THREE- BODY POTENTIAL W.Sekkal a, A. Zaoui b, A. Laref a, M. Certier b and H. Aourag a a Computational Materials Science Laboratory, Physics Department, University of Sidi Bel- Abbes, Algeria. b L. P. L. I., Metz Cedex 3 France. Three-body potential coupled with molecular dynamics method have been used to simulate structural properties of CuI in the zincblende and tetragonal phases. It is found that the diffusion constant is well reproduced for the (-phase of CuI using this model rather than two body potential. This study predicts also the presence of cation disorder at elevated temperature within the tetragonal phase of CuI.

157 DEVICE MODELING OF LIQUID CRYSTAL DISPLAY AND APPLICATION. D. Sari, H. Aourag Computational Materials Science Laboratory, Institut des Sciences Exactes. Université Djilali Liabes B.P, 22000, Sidi Bel Abbes. Many kinds of liquid crystals modes have been considered by using various types of liquid crystals, their surface alignments and optical effects. Among these modes, the twisted nematic mode ( TN-mode) is most widely used, so that fundamental device modelling of this display is discussed on surface treatments of substrates, and on design condition of material and device parameters. In this paper, the author will focus the discussion on liquid crystal device itself. The application of a liquid cell is proposed.

158 STUDY OF ELECTRONIC, ELASTIC, STRUCTURAL AND THERMODYNAMIC PROPERTIES OF CdTe AND ZnTe A. E. K. Merad 1, M. B. Kanoun 1, A. Laref 2, W. Sekkal 2, H. Aourag 2 and G. Merad 1 1 Laboratoire de physique des Matériaux Solides, Département de Physique, Faculté des Sciences, Université A.Belkaid de Tlemcen, BP.119, Tlemcen 13000, Algérie 2 Computational Materials Science Laboratory, Physics Department, Faculté des Sciences, Université of Sidi-Bel Abbès, Sidi-Bel Abbès 22000, Algérie. The II-VI compounds and their alloys exhibit many interest in various domains, such as optoelectronic applications, physics of surfaces, interfaces and superlattices. The goal of our communication is to calculate the different properties of CdTe and ZnTe using two different methods. In the one hand, we use of calculation which is the Tight-Binding Method (TBM) to obtain the electronic and elastic properties introducing two models: The Bond-Orbital Model (BOM) and the Extended Huckel Tight-Binding (XHTB) method. In the other, we use one method of simulation which is the molecular-Dynamics (MD) to obtain the structural and thermodynamic properties of CdTe and ZnTe. In this simulation the empirical Tersoff potential is applied. Comparing our results to the theoretical and experimental values, we suggest that we have a very well agreement which gives an importance to our work.

159 TIGHT-BINDING CALCULATIONS OF II-VI COMPOUNDS A. E. K. Merad 1, A. Laref 2, H. Aourag 2 and G. Merad 1 1 Laboratoire de physique des Matériaux Solides, Déepartement de Physique, Faculté des Sciences, Université A. Belkaid de Tlemcen, BP.119, Tlemcen 13000, Algérie 2 Computational Materials Science Laboratory, Physics Department, Faculté des Sciences, Université of Sidi-Bel Abbès, Sidi-Bel Abbès 22000, Algérie. The II-V semiconductors and their alloys are very important materials. For example, in optoelectronic applications and in substitution phenomena. The aim of our work is the calculation of electronic, optical and elastic properties of CdTe and ZnTe using the Tight- Binding Method (TBM). In this communication, we present calculations of energy band structures, densities of states, other electronic properties as the polarity (p, the metallicity (m, the transverse effective charge and optical properties as the refractive index n and the dielectric susceptibility (1. These properties are obtained by Empirical Tight-Binding Model (ETBM) using the sp3s* basis of states and the Bond-Orbital Method (BOM). This method can be extended to the calculation of elastic properties as the bulk modulus B, and elastic stiffness constants C11, C22 and C44 using the extended Huckel Tight- Binding (XHTB) method. Our results are compared to the theoretical and experimental values which give a good agreement and suggest the worth of our work.

160 THEORETICAL STUDIES OF POSITRON ANNIHILATION IN GaAlN AND GaInN ALLOY SYSTEMS F. Benkabou, and H. Aourag Computational Materials Science Laboratory, Physics Department, University of Sidi Bel- Abbes, Algeria. Angular correlation of positron annihilation radiation (ACAR) along different crystallographic direction in GaAlN and GaInN systems is calculated. It is observed that the electron positron momentum density increases rapidly with increasing Al and In content. The computational technique used here is based on the independent-particle model (IPM) coupled with the use of the electron pseudo wave function and the virtual crystal approximation (VCA).

161 DIELECTRIC PROPERTIES OF ZINC BLENDE GaN, InN AND AlN UNDER STRAIN A. Tadjer *, M.Rezki *, B.Abbar **, and H. Aourag * * Computational Materials Science Laboratory, University of Sidi-Bel-Abbes. ** Positron Physics Research Laboratory, University of Sidi-Bel-Abbes. An empirical pseudopotential method is used to investigate dielectric properties of strained and unstrained zincblende GaN, InN and AlN. Inducing strain in semiconductors is a widely used method for engineering band discontinuities in lattice matched heterojunctions. Strain effects on these optical and electronic properties such as densities of states and the imaginary part of the dielectric function are elucidated. The results show that the bandgap increases with strain, there is a big shift in the energy position of the peaks of ( (() as strain increases. The investigation will be useful for bandgap engineering and the design of lattice mismatched heterostructure optoelectronic devices on these materials in the UV to orange light range application. Keywords: Pseudopotential, Nitride based semiconductors, Dielectric Properties, Density of States, Strain.

162 PROPRIETES ELECTRONIQUES, OPTIQUES ET STRUCTURALES DU SiC ET GeC S. Ait Abderrahmane and H. Aourag Computational Materials Science Laboratory, Université Djillali Liabes de Sidi Bel Abbès. Bien que les Composés semi-conducteurs IV-IV tels que SiC, SiGe et GeC promettent un bel avenir technologique, ils ne jouissent pas d'une grande attention comme celle accorde aux matériaux semi-conducteurs élémentaires (Si, Ge et C). Récemment une attention particulier a t porte sur le carbure de silicium (SiC). Beaucoup d études et d'investigations ont t faites et SiC est devenu un composé familier dont on connaît actuellement grand nombre de propriétés. Un autre composé IV-IV non moins intéressant est le composé hypothétique GeC. Des investigations sur ce composé viennent d être entreprises, aussi ses propriétés demeurent encore inconnues. Dans ce travail, nous commençons par calculer les structures de bandes et les densités de charges du SiC et du GeC en utilisant la méthode du pseudopotentiel empirique et la méthode tight-binding. Nous trouvons que le GeC, tout comme le SiC, est un semi-conducteur large bande interdite et gap indirect. La densité de charge révèle que le GeC est plus ionique que le SiC. Nous avons calcul un autre concept intéressant l'ionicité : la charge effective transverse e*T. Le calcul a montre que le GeC possède une charge effective transverse plus élevé que celle du SiC. Par conséquent, nous déduisant que le GeC a une activité infrarouge plus prononce. Peu de relations empiriques relient l'indice de réfraction '' n '' l énergie gap d'un grand nombre de semi-conducteurs. Dans nos calculs nous utilisons une expression linaire de l'indice de réfraction. Les résultats obtenus concordent bien avec les résultats d'autres auteurs. Une

163 deuxième partie de ce travail est consacré au calcul ab-initio pour déterminer les propriétés d équilibre du SiC et du GeC, c'est dire, l énergie totale, la constante du réseau, le coefficient de compression et sa drive, la structure de bandes, la densité de charge et le facteur d'ionicité des liaisons chimiques. Plus loin, nous calculons les paramètres de Grneisen, la chaleur spécifique volume constant et le coefficient de dilatation thermique. Finalement, les résultats obtenus seront discutés et, par convenance, comparés aux résultats des autres auteurs.

164 THE IONICITY CHARACTER OF III-V COMPOUNDS UNDER PRESSURE EFFECT Y. Al-Douri, H. Abid, and H. Aourag Computational Materials Science Laboratoire, Physics Departement, University of Sidi Bel Abbes. An application study of the ionicity as a function of hydrostatic pressure for InSb, InAs and InP has presented. This factor has been calculated by means of our model. The structural phase transition can be seen easily from behavior of the bonding character. The results are compared with the theoretical and experimental data are in reasonable agreement

165 ANOMALOUS BEHAVIOR IN THE PHYSICAL PROPERTIES OF BORON COMPOUNDS Bachir Bouhafs * and Hafid Aourag # * Computational Physics Laboratory, Physics Department, University of Sidi-Bel-Abbes, Algeria. # Computational Materials Science Laboratory, Physics Department, University of Sidi-Bel- Abbes, Algeria. We have performed an ab-initio investigation for a series of boron compounds, BP, BAs, and BSb, and have compared their structural and electronic properties with those of c-BN. The calculations are performed using a planewave expansion within local density approximation and the pseudopotential approximation. Results are given for lattice constants, bulk moduli, band structures and band-gap pressure coefficients. The electronic properties of these compounds showed to have features that differ from those of other III-V materials. We found that the direct band-gap pressure coefficient in boron compounds is nearly independent on the anion substitutions. As a result, this trend is similar to the one caused by the cation substitutions in other zinc-blende compounds. This is another anomalous behavior which can be characterized by reversing the standard assignments for the anion and cation in these compounds.

166 CARACTRISATION DES TRANSISTORS BIPOLAIRES A BASE DE GaN S. Mansouri, Z. Benamara, R. Brahimi, S. Nouar, B. Cruzza Laboratoire de Micro-Electronique Appliquée- Université Djillali Liabes. GaN est un compos semiconducteur III-V grand gap (direct) qui prsente deux sortes d'applications dans le domaine de l'optolectronique o des travaux ont abouti la commercialisation des dispositifs tel que les diodes lectroluminescentes mettant la limite du violet et l'ultraviolet ainsi que dans le bleu. Ces rsultats ont pouss beaucoup de chercheurs orienter leurs travaux dans la micro-lectronique en ralisant des transistors base de GaN dont les premiers rsultats ont montr une bande passante nettement suprieur celle des transistors classiques d'o leurs introduction dans les systmes de communication et de radars. La caractrisation de ces transistors a montr que leurs performances restent toujours limits cause du dopage de la base, pour parer ce problme techniques de dopage avec d'autres types de dopants sont en mesure d' apporter la solution.

167 MONTE- CARLO CALCULATIONS OF KEV POSITRON SLOWING DOWN IN SOLIDS Z. Bousahla Positron Physics Laboratory, University of Sidi Bel- Abbes, Algeria. * Computational Materials Science Laboratory, Physics Department, University of Sidi Bel- Abbes, Algeria. A Monte- Carlo simulation method is used to investigate positron slowing down in Aluminum, Silicon and Germanium. Elastic scattering is based on the screened Rutherford differential cross section and inelastic processes are described by Gryzinski's semiempirical expression for each core and valence electron excitation. The parameters of mean penetration depth and implantation profile in GaAs are also predicted.

168 CREUSEMENT THERMIQUE DANS LES COUCHES MINCES: APPLICATION DU MODELE DU CREUSEMENT THERMIQUE A UNE COUCHE MINCE DE SILICIUM POLYCRISTALLIN. N. Benkhettou, B.Soudini & D.Rached Laboratoire de modélisation et de caractérisation des semi-conducteurs, Institut d'Electronique, Université Djillali Liabs Sidi Bel Abbès (22000). On a applique le modèle de creusement thermique de surface dans le voisinage d'un vertex (intersection de trois joints de grain) une couche mince de silicium polycristallin afin de modéliser les phénomènes de formation de trous sous l'hypothèse que les propriétés de surface soient isotopes. Les résultats montrent que la forme de la surface est indépendante du temps et du que ses dimensions sont linéairement proportionnelles t1/4 pour un angle quelconque la racine du sillon thermique, le calculs montrent que lorsque l'angle ( (l'angle compris entre deux joints de grain) diminue, la vitesse de pénétration du puits augmente et que le puits thermique creuse bien plus rapidement que le sillon thermique.

169 APPROCHE DE LA PROBLEMATIQUE DU NON-LIQUIDE DE FERMI EN DIMENSION UN AU MOYEN DES THEORIES CONFORMES M. Doui-Aici, B.soudini & H.Abid Laboratoire de Sciences des matériaux, Institut d'Electronique, Université de Sidi-bel Abbès, Algérie. Anderson a conjectur que la phase normale des supraconducteurs hautes température critique pourrait être un non-liquide de Fermi bi-dimensionnel. Il est donc intéressant de bien comprendre le cas unidimensionnel, en particulier, afin de savoir quelles quantités physiques testent vraiment le caractère non-liquide de Fermi, ou de tester la robustesse de ces phases différents types de désordre. Plus formellement, il est intéressant de disposer d'un exemple relié aux théories invariantes conformes bi-dimensionnelles car on dispose alors d'un modèle exactement soluble et on peut espérer des dérivations simples et élégantes qui s'appuient sur la puissances des méthodes bi-dimensionnelles.

170 STORED CHARGES ANALYSIS IN STRUCTURES OF FOUR-LAYER A. Hallouche Institut d'Electronique, Université de Sidi-Bel Abbès. Actually, at this phase of research on the optimization of power component, we are oriented to the realization of the structure able to work at very frequencies than those allowed by the old generation. The new structure of the actual generation had permitted to have less losses due mainly to the residual current.

171 ETUDE DE L'EVOLUTION DU NIVEAU DE FERMI SUPERFICIEL A L'INTERFACE DES DIODES SCHOTTKY Al/GaAs H. Mazari *, Z. Benamara *, N. Bachir Bouiadjra *, O. Bonnoud ** * Laboratoire de Microlectronique Appliquée, Université Djillali Liabs de Sidi Bel Abbès, Sidi-bel Abbès (22000), Algérie ** Groupe de Microlectronique et Visualisation, UPRESA-CNRS 6076 Campus de Beaulieu, Bt.11B, F-35042, Rennes cedex, France. L'arsniure de gallium possède des propriétés optiques bien supérieures celles du silicium. Grâce ces propriétés, on peut envisager l'intégration de fonctions électroniques et optiques sur le même substrat. Cependant, les interfaces réalises entre l'arsniure de gallium et ses oxydes naturels, les isolants ou les métaux demeurent de mauvaise qualité. On cherche donc des moyens de passive la surface d'arsniure de gallium. Heller a propos de traiter chimiquement cette surface par des sels de Ruthnium. Ce traitement améliore en effet les performances des piles photoélectrochimiques l'arsniure de gallium. Heller interprète ce phénomène en suggérant qu'il est d une diminution du nombre de défauts électroniques actifs l'interface. Une explication alternative est fournie par Aspnes qui considère que la variation de la position du niveau de Fermi superficiel est la cause de ce phénomène. Notre étude va dans ce sens. Nous avons déterminer la position du niveau de Fermi sur des diodes Schottky, base d'arsniure de gallium trait au Rthunium.

172 STRUCTURAL AND THERMODYNAMIC PROPERTIES OF ZINC- BLENDE ZnSe BY MOLECULAR DYNAMICS SIMULATION F. Z. Aoumeur Positron Physics Laboratory, Physics Dpartement, University of Sidi Bel Abbès 22000, Algeria. Structural and thermodynamic properties of structure zinc-blende ZnSe are studied by molecular dynamics simulation and calculated within the Tersoff potential model. The lattice constant, the cohesion energy, bulk modulus and its derivative are obtained. The thermal expansion coefficient is studied in the temperature range from 300 to 900 K, and the specific heat at constant volume is also calculated using the Tersoff potential. The results obtained are compared with other calculations within the local approximation (LDA).

173 L'EFFET DES PIEGES SUR LES CARACTRISTIQUES ELECTRIQUES DES DIODES SCHOTTKY Au/InP (100) ET Au/InSb/InP(100) B. Akkal *, Z. Benamara *, A. Bouzidi *, L. Bideux **, B. Gruzza ** * Laboratoire de Micro-lectronique Applique- Université Djillali Liabes. ** Laboratoire des Sciences des Matériaux pour l'Electronique et d'Automatique, Université Blaise Pascal de Clermont II, Les Czaux, Aubire Cedex, France. Dans ce travail, nous étudions l'effet des piges d électrons et de la densité d états d'interface sur les caractéristique et les paramètres électriques des diodes Schottky Au/InP (100) et Au/InSb/InP (100) o l'InSb est une fine couche de restructuration permettant de bloquer la migration d'Indium en surface. Pour cela, nous mesurons les caractéristiques courant-tension capacit-tension des diodes avec et sans restructuration. Nous proposons ensuite d'analys la qualité électrique des composants élaborés après la création d'interfaces Au/InP(100) sans recuit puis avec recuit de la surface du substrat une température de chauffage de 300C. La densité d états d'interface moyenne est valu base d'analyse des caractéristique I(V) et C(V) 4.23x1012 eV-1 cm-2 et 4.42x1012 eV-1 cm-2 pour les diodes Au/InP(100) et Au/InSb/InP(100) recuit 300C respectivement. Le présence de la densité d états d'interface est responsable de la non-linéarité de la caractéristique I(V), de même la non-linéarité de la caractéristique C-2(V) est due la présence des niveau pige de type donner. La caractéristique C(V) est contrôlée par deux niveaux donneurs localisés 0.78 eV et 1.1 eV au-dessous de la bande de conduction pour la diode Au/InP(100).

174 ETUDE PAR LA METHODE DE LA DYNAMIQUE MOLECULAIRE DE DETECTEURS OPTOELECTRONIQUES DANS L'INFRAROUGE A BASE DU Si x Ge 1-x et du SiGe S. Berrah, M. Driz Laboratoire de Modélisation et Caractérisation des Semi-Conducteurs Institut d'Electronique, Université Djillali Liabes, Sidi-Bel-Abbès, Algérie. Les éléments du groupe IV C (diamant), Si, Ge, -Sn et leur composés (SiGe, SiC, Si x Ge 1- x, Si x C 1-x ) sont la base de la micro-électronique. Leurs principaux avantages sont : la miniaturisation des circuits et l'accroissement de vitesse de fonctionnement. La détermination expérimentale des différentes propriétés physiques de ces composés reste toujours complique et difficile aux laboratoires. Par ailleurs, la simulation numérique nous permet ainsi de les déterminer. La dynamique moléculaire est l'une des principales méthodes classiques utilises dans l étude des différentes propriétés physiques ( structurales, thermodynamiques et dynamiques). Son principe consiste générer des trajectoires de phase en résolvant les équations de mouvement et de les analyser dans l'espace de phase. L'avantage d'une telle méthode par rapport aux autres telles que la Mont Cargo (minimisation de l énergie ) est de nous permettre d'investir les propriétés dynamiques et suivre l évolution du système au cours du temps. Le potentiel utilisé ici est le potentiel de Tersoff qui décrit mieux les interactions atomiques dans les éléments IV. Notre simulation a t porte sur les propriétés dynamiques en vu de déterminer la densité des phonons.

175 ANALYSIS OF THE DEGRADATION ON THE EXTERNAL SURFACES OF THE POLYMER MATRIX COMPOSITE BY THE OPTIMIZATION OF THE FIBBER ORIENTATION Bedia Adda 1, A. Tounsi 1, Z. Sereir 1, B. Boucham 1 and H. Houari 21 Laboratory of mechanical and material, University of Sidi Bel Abbes, 22000, Sidi Bel Abbes, Algeria 2 Laboratory of materials and catalysis, University of Sidi Bel Abbes, 22000, Sidi Bel Abbes, Algeria. Key words : Degradation, Fiber orientation, Moisture content, Polymer matrix, Composite, Residual stresses. This paper presents and illustrates a method to minimize the degradation on the external surfaces of the polymer matrix composites exposed to the air. The effect of the orientation of the reinforced fibbers begets a fluctuation and a variation of the values of the no- mechanical stresses which contribute to a phenomena of the degradation of the laminated composites. Our main objective in this part of the work is to study the evolution of the moisture content c(x,t) in the composite material. It can be done with a one-dimensional Fikian problem with a diffusivity D and a moisture content C using the finite elements method. The second step is using the TSAI's method for computing the residual stresses due to the diffusion moisture. Finally, in order to avoid a quickly degradation of the composite material, the study of the variation of the residual stresses versus the time and the fibber orientation gives us an

176 evaluation of the optimal angle. This work represents an attempt to minimize the influence of the fibber orientation on the degradation of the laminated composites. It was shown a characteristic solution to the phenomena of the degradation of the composite material. Our solution with our method have assesses its validity and demonstrated its higher efficiency. Thus all significant features of long-term behavior are readily obtained by the present method, which can help the lifetime studies for structural parts of the polymer matrix composite.

177 A MODEL FOR ANALYZING THE INTERFACE STATES EFFECT OF A MOS STRUCTURE. H. Dib 1, Z. Benamara 1, A. Boudissa 1, F. Raoult 2, and O. Bonnaud 2 1 Laboratoire de micro-électronique applique, Université Djillali Liabes, Sidi Bel Abbes, 22000, Algeria. 2 Groupe de micro-électronique et Visualisation, CCMO-URA CNRS 1648, Université de Rennes I, Campus de Beaulieu, 35042, Rennes Cedex, France. In order to analyze the traps states density effect on metal/oxide/polysilicon structure, we simulate the electrostatics potential distribution and C(V) curves for different densities of interfaces states at Si/SiO2 interface and the traps states at grains boundaries in the range of 0 to 1013 cm-2. The layer of polysilicon is mobilized by three rectangular crystallite of monosilicon separated by the identical grain boundaries parallel to the SiO2 /polysilicon interface. The results shown that the electrostatic potential distribution present a barriers at the grains boundaries and Si/Sio2 interface. These barriers height increases with the increasing of the traps and interface states densities. The calculated C(V) curves show that the increase of the traps states densities at grain boundaries causes an increase of minimal capacitance value and a transition toward positive voltage. Note that the opposite effect is true C(V) characteristics are similar at the accumulation and inversion region for the tow case.

178 EFFECT OF GRAIN SIZE AND GRAIN BOUNDARIES STATE DENSITY IN POLY-Si(N + )/C-Si(P) SOLAR CELL USING FIRST- PRINCIPLES COMPUTER MODELING B. Zbentout, H. Sehil, A. Joti, H. Dib, H. Boudiaf, Y. Bourezig and Z. Benamara Laboratoire de Micro-Electronique Appliquée, Université Djillali Liabés Sidi Bel Abbès (22000), Algérie. Recently, a particular interest is given to polysilicon material in terrestrial photovoltaic conversion devices as solar cells with weak cost and several structures have been studied to improve the out put parameters. The aim of this work is to test the theoretical predictions on our structure poly-Si(N+)/mono-Si(P) in particular the polysilicon front layer (thickness, grain size and the high density of trap states localized at the grain boundaries) and at poly-Si(N)/mono-Si(P) interface. The results showed that trap states localized at grain boundaries increase the speed of recombination that provokes a reduction of short circuit and open circuit voltage values.

179 Evaluation of The Size of The Plastic Zone in Mode I for Elasto- Plastic Behavior Material M. Benguediab}, M. Belhouari, K. Madani and N. Ranganathan Institute of Mechanical Engineering, University of Sidi Bel Abbès BP89, Cité Ben M'hidi Sidi Bel Abbès, Algeria During cracks propagation, it cornes up a high stress concentration in the immediate threshold of the crack. This results in an important plasticity in the zone localized at the threshold. In this plastic zone damage will comes up and result, in case, either to a sudden crack or a progression crack. The determination of the size of the plastic zone has been a subject of many studies. Our work consist in developing a computational code by finite elements in order to determine the size of the plastic zone under loading in mode I. The computations are made according to Von Mises and Tresca criteria, and the influence of thickness has been brought to evidence. The results obtained for the different samples were compared to those numerically estimated and experimentally measured.

180 STUDY AND SIMULATION OF THE SPECTRALLY RESOLVED (SI- SPL) SCANNING PHOTOLUMINESCENCE APPLIED TO InAlAs/InP HETEROSTRUCTURE H. Gharib 1, T. Benbakhti 1, M. Derras 2 1 Laboratoire de Microscope Electronique, Institut d'Electronique Université Djillali Liabs BP, 89 Sidi Bel Abbès Algérie 2 Centre de Dévelopement des Techniques Nucléaires (CDTN) N02 Boulevard Frantz Fanon Alger Gare G.G. Alger In the research of components still more effective, different methods of analysis and characterization apt to provide information on critical and important parameters (resistivity, mobility and defects) have been developed. We used spectrally integrated (SI-SPL) and spectrally resolved (SR-SPL) scanning photoluminescence at room temperature for the study of the InAlAs/InP heterostructure. This technique of measure is a fast and non- destructive method permitting in practice a follow-up of the electronic properties. We present in previous, the complete theory permitting the description of photoluminescence spectra of compound semiconductor substrate. In this work, we applied this theory adapted to the InAlAs/InP heterostructure, while using a decomposition of the optical excitation bundle. We also simulated photoluminescence spectra and studied the influence of material parameters and optical excitation intensity, on the shape of spectra.

181 ETUDE DE L'AMORPHISATION DE LA SURFACE DE Si(111) PAR BOMBARDEMENT IONIQUE ET DE LA REORGANISATION PAR RECUIT THERMIQUE A. Cheheb Materials and components Physics Laboratory, University Djillali Liabes BP , Algeria. Les Pics basse énergie sont détectés par spectroscopie des électrons secondaires (SES) du cristal de Si(111). Ces pics traduisent des maxima de la densité des états inoccupés et correspondent des particularités du diagramme de bandes d énergie calcul pour le Si massif. Leur sensibilité, lorsqu'on étudie l'amorphisation d'une surface amorphe consécutive au recuit thermique, est démontre

182 ETUDE DE L'EFFET DE RESONANCE DANS LES STRUCTURES A EFFET TUNNEL H. Khalfoun, F. Hamdache and N. Benharrats LES ALGORITHMES REVERSIBLES DANS LE TEMPS ET LA DYNAMIQUE MOLECULAIRE N. Tchouar L'EFFET DE L'ATOME NEUTRE DE ZINC SUR LES PROPRIETES ELECTRONIQUES DES COUCHES D'OXYDE DE ZINC R. A. Rabadanov, T. Filiachi EFFET DES PARAMETRES ELECTRIQUES DE LA JONCTION SUR LE VOLUME D'INTERACTION ELECTRON-MATIERE M. Derras, A. Kadoun, G. Bassou, H. Gharib EVOLUTION D'UNE STRUCTURE DUAL-PHASE A PARTIR D'UN ACIER DISPERSOIDE X60 S. Zidelmel & M. Hadji

183 Si-H THIN FILMS TRANSISTOR M. Aida and M-F. Mosbah Unité de Recherche de Physique, Université de Mentouri, Constantine 25000, Algérie. Monday, 25 October 17: :30 Abstract: not receved

184 FIRST-PRINCIPLES DETERMINATION OF Au-Ni PHASE DIAGRAM R. Halimi Université de Constantine, Unit. de recherche de Physique des matériaux. Tuesday, 26 October 11: :35 Abstract: not received

185 HYDRODYNAMIC EFFECT OF RECTILING DISC ELECTRODE D. Abdi Université de Setif, Algérie Tuesday, 26 October 11: :05 Abstract: not received

186 STUDY OF MESA 6H-SiC HIGH VOLTAGE RECTIFIER K. Gaffour Département de Physique, Faculté des Sciences, Université A.Belkaid de Tlemcen, BP.119, Tlemcen 13000, Algérie Tuesday, 26 October 16: :15 Abstract: not received.

187 ELECTRICAL AND MAGNETIC COUPLING IN CERAMIC SUPRACONDUCTOR A. Khalfi Université Djillali Liabes de Sidi Bel Abbès, Algérie. Tuesday, 26 October 17: :15 Abstract: The paper examines mechanisms which limit transport critical current in bulk ceramic YBa 2 Cu 3 O 7-. Thermal effects at the current electrodes are first discounted by careful experimental design and protocol. Transport critical current measurements on bicrystals show attenuation dy the grain boundary. Following amodel due to dersh and blatter based on weak link behaviour the local critical current density depends on the local (self) field H in the cerami. The predicted dependence of J c with sample cross section is tested with experimental data for small grain ceramic samples with significantly different microstructures. Finally in hollow cylinders application of an opposing magnetic field to H generated from current following along a centrally placed copper wire leads to an increase of the critical current.

188 LES FIBRES DE VERRE PARTICLARITES TECHNOLOGIQUES ET CONCEPTUELLES DES ENGINS MARINS Dr. M. Khalladi (DRD-CFN, Algeria) Abstract: not received

189 CONSTRUCTION DUNE SOLUTION POUR LEQUATION DIFFERENTIELLE DE PAINLEVE Prof. A. Bouabdellah (USTHB, Algeria) Abstract: not received

190 III-N MATERIALS FOR MICROSENSORS APPLICATIONS Prof. A. Bensaoula (SVEC-NASA, USA) Abstract: not received

191 Abbar B. Organizer/ Participant Univ. of Sidi Bel Abbès Abbouni N. Participant Univ. of Sidi Bel Abbès Abdelmoula A. Visitor Univ. of Es-Sénia Abdi D. Participant Univ. of Sétif Abid H. Visitor Univ. of Sidi Bel Abbès Aiad R. Visitor Univ. of Blida Ait Abderrahmane S. Participant Univ. of Sidi Bel Abbès Ait Kaci H. Participant Univ. of Es-Sénia Akkal B. Participant Univ. of Sidi Bel Abbès Al-Dhafiri A. M. Guest Speaker King Saud University Riyad Al-Douri Y. Participant Univ. of Sidi Bel Abbès Amrane N. President Univ. of Sidi Bel Abbès Amriou T. Invited Student Univ. of Sidi Bel Abbès Amroune A. Visitor Univ. of Constantine Annani M. Participant Univ. of Sidi Bel Abbès Aoucher M. Guest Scientist USTHB Aoumeur F. Z. Participant Univ. of Sidi Bel Abbès Aourag H. Director of CRU Univ. of Sidi Bel Abbès Badji R. Participant Univ. of Blida Barhdadi A. Guest Speaker Rabat, Morocco Bassou G. Visitor Univ. of Sidi Bel Abbès Bedia Adda E. Participant Univ. of Sidi Bel Abbès LISTE DES PARTICIPANTS

192 Behli S. Visitor CEA Belaidi A. Participant ENSET, Oran Belarbi A. Visitor Univ. Tiaret Beldi N. Visitor USTHB Belghobsi Z. Participant Univ. of Constantine Belhadj M. Participant Univ. of Sidi Bel Abbès Belhadji M. Visitor Univ. of Es-Sénia Belhakem M. Visitor Univ. Mostaganem Benabed L. Visitor Univ. of Es-Sénia Benamara Z. Participant Univ. of Sidi Bel Abbès Benazzouz C. Participant CEA Benbakhti T. Participant Univ. of Sidi Bel Abbès Benchikh A. Participant Univ. of Sidi Bel Abbès Benguediab M. Participant Univ. of Sidi Bel Abbès Benhaliliba M. Participant USTO Benhelal O. Organizer Univ. of Sidi Bel Abbès Benkabou F. Participant Univ. of Sidi Bel Abbès Benkherourou M. Visitor Univ.of Constantine Benkhettou N. Participant Univ. of Sidi Bel Abbès Benmelouka Visitor USTO Benosman N. Organizer/ Participant Univ. of Sidi Bel Abbès Benramdane N. Participant Univ. of Sidi Bel Abbès Bensaoula A. Participant SVEC-NASA, USA Benyoucef B. Guest Scientist Univ. of Tlemcen Benzair A. Invited Student Univ. of Sidi Bel Abbès

193 Berrah S. Participant Univ. of Sidi Bel Abbès Blidi Boukamel N. Participant Univ. of Es-Sénia Bouabdellah A. Guest Speaker USTHB Bouafia M. Visitor Univ. of Sétif Bouarissa N. Guest Scientist Univ. of M'sila Bouchaour Z. Participant Univ. of Es-Sénia Bouchikhi A. Visitor Univ. of Sidi Bel Abbès Boudissa A. Invited Student Univ. of Sidi Bel Abbès Boudissa M. Participant Univ. of Sétif Bougoul S. Participant URTH-INRA Bougrioua F. Guest Speaker ELIS, Gent University - IMEC, Belgium Bougrioua Z. Guest Speaker INTEC, Gent University - IMEC, Belgium Bouhafs B. Organizer/ Participant Univ. of Sidi Bel Abbès Boulma E. Participant Univ. of Annaba Boumaaza A. Participant Univ. Center of Oum El Bouaghi Boumedienne A. Visitor Univ. of Blida Bousahla Z. Participant Univ. of Sidi Bel Abbès Bousetta A. Guest Speaker KLA-Tencor Corporation, California, USA. Boussaa N. Visitor CEA Boutaleb H. Participant Univ. of Es-Sénia Chaabane Sari N.E. Participant Univ. of Tlemcen Chahed A. Organizer Univ. of Sidi Bel Abbès Chaieb S. Guest Speaker Massachusetts Institute of Technology, Massachusetts, USA Chaoui Z. Visitor Univ. of Sétif

194 Cheheb A. Participant Univ. of Sidi Bel Abbès Chemam F. Participant Univ. center of Tebessa Cherfi R. Visitor USTHB Chikouche A. Guest Scientist CEA Chitroub M. Participant Ecole nationale polytechnique, Algiers Derbal M. Visitor Univ. of Blida Derras M. Participant CDTN Diaf M. Participant Univ. of Annaba Dib H. Participant Univ. of Sidi Bel Abbès Doui-Aici M. Participant Univ. of Sidi Bel Abbès Dridi Z. Participant Univ. of Sidi Bel Abbès Driss-Khodja K. Guest Scientist Univ. of Es-Sénia Driz M. Visitor Univ. of Sidi Bel Abbès El-Mellouhi F. Invited Student Univ. of Sidi Bel Abbès Farhi G. Participant USTHB Ferhat M. Participant USTO Ferrag M. Visitor Univ. of Annaba Filiachi T. Participant Univ. of Biskra Gaffour K. Participant Univ. of Tlemcen Gharib H. Participant Univ. of Sidi Bel Abbès Goumri-Said S. Participant Univ. of Sidi Bel Abbès Guittoum A. Visitor CEA Hadjar Y. Participant Univ. of Batna Hadjersi T. Participant Dev. and Tech. of Si Unit, Algiers Hadji M. Visitor Univ. of Blida

195 Halimi R. Participant Univ. of Constantine Hallouche A. Participant Univ. of Sidi Bel Abbès Hamdache F. Guest Scientist USTO Hellal F. Guest Scientist ENP, Algiers Kacimi S. Guest Scientist Univ. of Sidi Bel Abbès Kadoun A. Visitor Univ. of Sidi Bel Abbès Kadri A. Guest Speaker CEA Kandouci A. Head of UDL Univ. of Sidi Bel Abbès Kanoun M. B. Participant Univ. of Tlemcen Kassali K. Visitor Univ. of Sétif Kechouane M. Participant USTHB Kellou A. Participant Univ. of Sidi Bel Abbès Kerkar M. Visitor Ecole nationale polytechnique, Algiers Khaladi A. Participant CFN Khalfi A. Participant Univ. of Sidi Bel Abbès Khalfoun H. Participant USTO Khelifa B. Guest Speaker Univ. of Artois, France Krallafa A. Guest Speaker Univ. of Es-Sénia Krim F. Participant Univ. of Es-Sénia Labbaci K. Participant Univ. of Annaba Labbani R. Participant Univ. of Constantine Laihem K. Participant USTHB Lakdja A. Organizer Univ. of Sidi Bel Abbès Laksari S. Participant Univ. of Sidi Bel Abbès

196 Laref A. Participant Univ. of Sidi Bel Abbès Lazreg A. Invited Student Univ. of Sidi Bel Abbès Louhibi M. M. El. Organizer Univ. of Sidi Bel Abbès M. Remram Participant Univ. of Constantine Mami Y. Invited Student Univ. of Es-Sénia Mamoun A. Guest Scientist Univ. of Es-Sénia Mansouri S. Participant Univ. of Sidi Bel Abbès Mattalah M. Participant Univ. of Es-Sénia Mayoufi M. Visitor Univ. of Annaba Mazari H. Participant Univ. of Sidi Bel Abbès Méçabih S. Organizer/ Participant Univ. of Sidi Bel Abbès Medjahed A. Visitor Univ. of Sétif Merad A. E. K. Participant Univ. of Tlemcen Merad G. Participant Univ. of Tlemcen Metadjer N. Participant Univ. of Sidi Bel Abbès Mokdad N. Participant Univ. of Es-Sénia Mosbah M-F. Participant Univ. of Constantine Mouffak B. Organizer Univ. of Sidi Bel Abbès Mouheb Visitor USTHB Moussa R. Participant Univ. of Sidi Bel Abbès Nabi Z. Organizer/ Participant Univ. of Sidi Bel Abbès Nouiri A. Participant Univ. of Constantine Ouagued A. Visitor Univ. of Mostaganem Ouennoughi Z. Visitor Univ. of Sétif Ould-Abbès A. Invited Student Univ. of Tlemcen

197 Rached D. Participant Univ. of Sidi Bel Abbès Rais A. Guest Speaker Univ. of Sultan Qaboos, Sultanate of Oman Rerbal K. Invited Student Univ. of Tlemcen Roula A. Participant C. U. Jijel Saib S. Participant Univ. of M'sila Sari D. Participant Univ. of Sidi Bel Abbès Sayede A. Organizer/ Participant Univ. of Sidi Bel Abbès Sekkal W. Organizer/ Participant Univ. of Sidi Bel Abbès Sellai A. Guest Speaker Univ. of Sultan Qaboos, Sultanate of Oman Semra L. Participant Univ. of Constantine Sérier A. Participant Univ. of Sidi Bel Abbès Sidoumou M. Participant Univ. of Blida Smail T. Participant USTHB Soudini B. Visitor Univ. of Sidi Bel Abbès Tadjer A. Organizer/ Participant Univ. of Sidi Bel Abbès Tchouar N. Participant USTO Temmar M. Visitor Univ. of Blida Tizi S. Invited Student Univ. of Sidi Bel Abbès Yagoubi A. Invited Student Univ. of Sidi Bel Abbès Yagoubi B. Participant Univ. of Mostaganem Zaoui A. Invited Student Univ. of Sidi Bel Abbès Zbentout B. Participant Univ. of Sidi Bel Abbès Zedira H. Participant Univ. center of Oum El Bouaghi Zekri N. Guest Scientist USTO Zellag S. Participant Univ. of Bejaia

198 Zellama K. Visitor USTHB Zidelmel S. Participant Univ. of Blida Zilabdi M. Visitor CEA

199 PLAY Center Administration Center Administration Center Overview Center Overview Center Research Center Research

200 PLAY Center Administration Center Administration Center Overview Center Overview Center Research Center Research

201 UDLRC Administration The CHANCELLOR A.Kandouci DIRECTOR H.Aourag, DEPARTMENTS A. Tadjer, Department of Studies M.E.Louhibi, Department of Research B.Djahed, Department of Public Relations O.Benhelal, Department of Scientific Activities

202 UDLRC Overview The University Djillali Liabes Research Center (UDLRC) a National Science Foundation Center for research, education, and industrial outreach in the pluridisciplinary fields. The Center is a consortium consisting of all the research laboratories of the University Djillali Liabes of Sidi-bel-Abbes. In a highly interactive approach, physicists, chemists, material scientists, electrical engineers and Social researchers address fundamental questions and convey the knowledge gained to the industrial and educational sectors. The Center is the largest federally-funded university-based research effort. Established on May 1, 1999, contract on behalf of the consortium. Scientists in organizations outside the Center can participate in research through short-term or sabbatical-type visits, subcontracts, or collaborative projects. Workshops highlight special topics for experts > and bring potential practitioners and teachers up to date on recent developments. The Center has achieved its goal of reaching national prominence in the any research field and as a resource for both individual researchers and technologists in this field, An active industrial outreach program is in place, and collaborative programs on research, workshops and education are encouraged.

203 Physics Laboratories Computational Materials Science Laboratory (Pr H.Aourag) Computational Physics Laboratory (Dr B. Bouhafs) Positron Physics Laboratory (Dr N.Amrane) Mathematics Laboratories Stochastic Processus Laboratory (Dr B. Chouaf) Mathematics Laboratory ( Dr M. Mechab) Differential Equations Analysis Laboratory ( Mr A.Lakmeche) Fonctionnal Analysis Laboratory (Dr M. Hamoudi Chemistry Laboratories Polymers Chemistry Laboratory ( Pr A.Mesli) Organic Chemistry Laboratory ( Pr S.Taleb) Catalysis Laboratory ( Dr A. Benghalem) Materials Science Laboratory ( Dr A.Leboukh) Electronics Applied Microelectronics Laboratory ( Dr Z.Benamara) Semiconductors Physics and Devices ( Dr N.Benramdane) Signal and Systems Laboratory ( Dr A.Djebbari)

204 C omputational M aterials s cience L aboratory Director H. Aourag Members A. Tadjer, F. Benkabou, R. Moussa, W. Sekkal, A. Laraf, O. Benhelal, A. Sayede, A. Lakdjaa, S. Goumri, N. Metadjer, F. El Malouhi, M, Belhadj. Projects Study of electronic, structural and optoelectronic properties of nitride based semiconductors Gap photonique

205 Semiconductors Materials Laboratory Director H. Abid Members B Doudini, Z Bensaad, K Benkabou, M Rabah, Y Aldouri, B Daoudi, M Benhammou, Z Chellahi. Projects Etude des propriétés électroniques et optiques des semiconducteurs et leurs alliages. Etude des propriétés électroniques et optiques de supraconducteurs par la méthode LAPW

206 Materials Mechanics Laboratory Director A. Adda-Bedia Members M Bounzef, A Tounsi, F B Boukhoulda, M Benguediab Projects Comportement en fatigue des matériaux Caractéristiques des matériaux composites

207 L. G. R. E. S. Director A. Kandouci Members B. Djahed Projects

208 Positron Physics Laboratory Director N. Amrane Members B. Abbar Z. Nabi S. Mecabih N. Benosman A. Bencheikh M. Maachou N. Abouni A. Chahed A. Kellou S. Laksari Projects Etude de la matière par les positrons

209 Electronic Microscopy Laboratory Director G. Bassou Members T Benbakhti, A Kadoun, M Beghdad, D Mehal Projects.Caractérisation des matériaux par microscopie EBIC, Corrélation avec dautres techniques Etude expérimentale des propriétés électroniques et optiques de matériaux semiconducteurs en dapplications dans les technologies avancées

210 Computational Physics Laboratory Director Bachir Bouhafs Members A. Benzair S. Mansouri A. Lazreg Z. Dridi T.Amriou A.Zaoui Projects Computational Physics Laboratory Director Bachir Bouhafs Members A. Benzair S. Mansouri A. Lazreg Z. Dridi T.Amriou A.Zaoui Projects

211 Schocastic Models Laboratory Director B. Chouaf Members A Gheriballah, A Laksaci ), F Tebboune ), A Yousfate, N Ziane Projects Processus Ponctuels Périodiques. Modélisation par files dattente

212 Quality and Managment Laboratory Director M. Dani El Kebir Members M. Remaoun B. Dahmani L. Baba Ahmed

213 Computational Semiconductor Science Laboratory Director M. Driz Members A Joti (3), N Benkhettou (3), D Rached (3),R BORSALI (3). Projects.Modelisation of physical and electronic properties of semiconductor devices Injection techniques of carriers

214 Intelligent Circuit and Systems Laboratory Director Dr M. Larbi-Boudhir Members A Miloua,A Tou, M Remaoun, R Nourine, Y Chafi (3). Projects.Conception dun système à base de connaissances à partir des images satellitaires indéxées par contenu. Aide à linterprétation et à la prise de décision

215 Electrical Energy Conversion and Control Laboraotry Director M.K. Fellah Members S. Hadjeri M. Brahami S. Zidi A. Benaissa H. Sayah F. Gharbi A. Meroufel Projects.Méthodologie de conception et de synthèse des systèmes de conversion statiques Réseaux de transport et de distribution délectricité et de lenvironement

216 Economic Development Laboratory Director Mr B.Filali Members A Boucenda,F Fettat, E Salah Projects Les apports en sociétés commercizales Conccurence et protection du consommateur sur le plan administratif, juridique et associatif

217 Materials Science Laboratory Director A. Khalfi Members A Aminallah, S Bellebia, A Leboukh, A Djedid Projects Synthèse, élaboration, densification et caractérisation des matériaux suppraconducteurs de type II et diélectriques pour résonateurs en hyperfréquences

218 Mathematics Laboratory Director M. Mechab Members Benchohra,M Tounsi, A Benaissa, F Derrab, N Amroun,K Guerbati, M O Baouche Projects Analyse fonctionnelles appliquée à des problèmes physiques

219 Polymers Chemistry Laboratory Director Pr A. Mesli Members N. Chafi M. Tabet-Driz D.Medine L. Belarbi Projects. Synthèse, caractérisation et étude physico- chimique de polymères acryliques et métaryliques fonctionnalisés Synthèse et caractérisation de nouveaux monomères fonctionnalisés

220 Popular Culture Laboratory Director N. Sebbar Members Projects

221 Organic Chemistry Laboratory Director S. Taleb Members D. Harrache A. Addou Projects

222 Public Law Laboratory Director B.Tayebi Members Projects

223 Telecommunication & Signal Processing Laboratory Director Mohamed Djebbouri Laboratory members A Benaissa, Z Chama, Z Mahdjoub, Projects Développement dun système à étalement spectrale à séquence directe.

224 Digital Television Laboratory Director : Aoued Boukhlif members A Azaiz, K Benchikh, A Meroufel, projects Diffusion numérique de la télévision :Réalisation dune chaîne de télévision numérique

225 Applied Micro-electronic Laboratory Director Z Benamara members H Sehil, FS Bachir Bouiadjra, N Bachir Bouiadjra, B Akkal, M Chellali, M Amrani, ST Boudissa, H Boudiaf, Y S Bourezig, H M Mansour, A Joti, B Zebentout. projects Utilisation des semiconducteurs III-V dans les dispositifs électroniques Caractérisation-Modélisation. Dispositifs électronique au silicium polycristallin. Elaboration, caractérisation et modélisation Etude des échantillons à base de Ga x Al 1-x As- Spectroscopie électroniques, optiques et mesures électriques associées.

226 Materials & Devices Laboratory Director N Benramdane Members L Gaffour, A Cheheb, Z Zoubir, H Tabet-Derraz, A Bouzidi, M Latreche ), Projects Préparation et caracterisation de couches minces semi-conductrices par la méthode spray/ application aux dispositifs électroniques

227 Optical Communication & Micro-wave Laboratory Director Rafaa Naoum Laboratory members F Salah-Belkhodja, H Dib, K Khelil ), projects Sybthèse des méthodes danalyse en optique intégrée. Application pour la mise au point de nouveaux composants

228 Industrial Micro-computing & Electronic Laboratory Director Mohamed El Hadi Louhibi Laboratory members M N Rahmani, M Elarbi-A Benmansour, A Rahmani, M Bentoutou, A Azaiz projects Contrôle & Régulation des systèmes.

229 Components Modelization & Circuits Conception Laboratory Director Rabéa Menezla Laboratory members Z Bensaad, S Mansouri, M Anani Projects Developpement dun programme sur machine parallele pour la simulation 3D des mécanismes de transport dans les composantsà semi-conducteurs en présence de centres profonds

230 Signals & Systems Laboratory Director Ali Djebbari Members A Bounoua, N Taleb, R Meliani, A Djebbari A Azzedine,M Bouziani, SA Chouakri, H Bounoua. Projects Developing new coding methods, implementation and reconstitution applied to picture & sound

231 Materials & Catalysis Laboratory Director S M Kacimi Members A Benghalem, S Kacha ), M Sebbane, B Mouffok, H Hireche, A Mahdad, Z Zizi Projects Mise en valeur dun materiau local ( benbonite) dans le traitement des eaux usées industrielles et urbaines. Elaboration et caractérisation dalumines pures. Effets des dopants Valorisation des ressources minières locales ( argiles : type montmorillonite et benbonite, danslépuration des eaux polluées par les rejets industriels).

232 Functional Analysis Laboratory Director A Hammoudi Members A Hakem, O Bouabdellah, B Chafi, M Mechab Projects Résolution de problèmes sur des domaines à singularités coniques.Etude des structures complexes des variétés homogènes

233 Differential Equations & Analysis Laboratory Director A Lakmechei Members A Belarbi, M Derhabi, M Lakrib, A Oumensour Projects Mathématiques Appliqués à lécologie et lenvironnment

234 Network Information Systems & Engineering Laboratory Director A Bouachria Members M Malki, A Messabih, A Bensahla, Z Slama, M Arrar Projects Nouvelle génération des bases de données Genération architecture Client/serveur Retro-Ingénierie des bases de données : méthodologies et outils

235 Architecture & Control Laboratory Director A Rahmoun Members A Lehirèche, A Gafour, M Benmohammed, Z El Berichi Projects Contrôle intelligent et systèmes

236 Soils & Structures Laboratory Director A. Asroun Members M E Driss, A Berrahou, H Kouider, B Bachir B Projects Geotechnique réginale : Contribution à la conception de matériaux de construction et de nouveaux systèmes constructifs. Rhéologie des fluides complexes, modélisation des écoulements et applications.

237 Geological & Mining Research Laboratory Director L. Hamel Members M Benyahia, K Mouddene, M Bouklikha, K Boucenda Projects Recherche de minérauc lourds valorisables, en particulier ceux de titane, dans les sables noirs du littoral oranis ouest entre les caps sigale et figalo

238 Organism Biology & Populations Laboratory Director S Moulessehoul Members H Boudifa, A Benayad, Z Mehdadi, Z Benaouda Projects Etude hydrobiologique de loued Mekkara en amont et en aval de la station dépuration, de la ville de Sidi Bel Abbès

239 Biochemistry Nutritional Laboratory Director S Belbraouet Members B Bouchikhi, M Benali, Kaddouri, T Zahzah Projects Statut nutritionnelle des enfants et des personnes agées vivant dans la région de Sidi Bel Abbès

240 Chemistry & Physio-chemistry Laboratory Director B Benayad Members R Mehraz, K Moussa, N Bestaoui Projects Compsés à usage biologique et pharmaceutique.

241 Machines & Networks Laboratory Director Y Ramdan Members A Tilmatine, M Benabdellah, A Meroufel, A Hallouche, B Dehiba Projects Stratégies de commande des machines électriques face aux interactions convertisseurs -réseaux Séparation électriques des particules granuleuses

242 Energy Laboratory Director M Amine Allah Members L Hamadi, B Boutabout,M Makhlouf, A K Megueni N Mokhtari, A Lousdad,A Benazza, H M Medah, A Benaceur, M Fellah Projects

243 Epidemic & Public health Laboratory Director A Soulimane Projects Santé des adolescents Epidémiologie des cancers à Sidi Bel Abbès Members Z Zouaoui, A tou, S Bradai, F Hellal

244 Ecosystem Management Laboratory Director K Benabdelli Members B Benseddik, K Moueddene,B Djahed Projects Analyse dimages satellites pour le suivi de lévolution spatio-temporelle du couvert végétal : cas de limgerie NOAA/AVHRR appliquée à louest algerien. Le son de blé, valorisation et opportunités industrielles Quantificationde paramètres stressants du blé dur dans les zones arides.

245 Management of Organisms Laboratory Director A Bourahla Members M B Lebig, M Medjaoud, F Naimi Projects Culture et management Gestion de la consommation des eaux à Sidi Bel Abbès

246 Adaptation musicale: Lakdja A/ Aziz Idée originale : Pr. Aourag Hafid. : Conseiller technique: Tadjer Abdelkader Tadjer Abdelkader Benhelal Omar : Réalisation & Montage Vidéo : Effets spéciaux: Sayede Adlane Ce CD-ROM a été réalisé au CMSL CMSL Faculté des sciences Université de Sidi Bel Abbes 22000, Algeria.


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