Ulis 2003 4th European Workshop on ULtimate Integration of Silicon Theoretical investigation of hole phonon-velocity in strained Si inversion layer F.

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Transcription de la présentation:

Ulis th European Workshop on ULtimate Integration of Silicon Theoretical investigation of hole phonon-velocity in strained Si inversion layer F. Payet (1,2), N. Cavassilas (1), J.L. Autran (1) (1) Laboratoire Matériaux et Microélectronique de Provence UMR CNRS Marseille/Toulon (France) - (2) ST Microelectronics Crolles

Laboratoire Matériaux et Microélectronique de Provence UMR CNRS Marseille/Toulon (France) - ST Microelectronics Crolles Outline  Strained Silicon Deformed Si lattice Strain contribution on the valence band Strain consequences on transport properties  Strained Silicon inversion layer Strained Si MOSFET Tensile strain and quantization effects Transport results  Conclusion  Strained Silicon Deformed Si lattice Strain contribution on the valence band Strain consequences on transport properties  Strained Silicon inversion layer Strained Si MOSFET Tensile strain and quantization effects Transport results  Conclusion

Laboratoire Matériaux et Microélectronique de Provence UMR CNRS Marseille/Toulon (France) - ST Microelectronics Crolles The System Strained Si on SiGe [001] [100] [010] Two strain contributions: Hydrostatic Uniaxial → lower lattice symmetry Si 1-x Ge x strainedSi a SiGe (x) a (x) a // (x) a  (x) a SiGe (x) a // (x)

Laboratoire Matériaux et Microélectronique de Provence UMR CNRS Marseille/Toulon (France) - ST Microelectronics Crolles Tensile Strain Contribution on Band Structure

Laboratoire Matériaux et Microélectronique de Provence UMR CNRS Marseille/Toulon (France) - ST Microelectronics Crolles Tensile Strain Contribution on Band Structure Band Structure

Laboratoire Matériaux et Microélectronique de Provence UMR CNRS Marseille/Toulon (France) - ST Microelectronics Crolles Strain Contribution on the Valence Band Unstrained Si Si/SiGe LH BandHH Band phonon [100] [010] [110] [100] [010] [110]

Laboratoire Matériaux et Microélectronique de Provence UMR CNRS Marseille/Toulon (France) - ST Microelectronics Crolles Strain Consequences on Transport Properties < 1 % in HH ≈ 86 % in HH F= 30 kV/cm

Laboratoire Matériaux et Microélectronique de Provence UMR CNRS Marseille/Toulon (France) - ST Microelectronics Crolles Strain Consequences on Transport Properties Hole Drift Velocity LH Band HH Band F = 50 kV/cm Distribution Functions F kyky kxkx F F kyky kxkx kyky kxkx

Laboratoire Matériaux et Microélectronique de Provence UMR CNRS Marseille/Toulon (France) - ST Microelectronics Crolles Strain Consequences on Transport Properties F = 50 kV/cm Distribution Functions F kyky kxkx F F kyky kxkx kyky kxkx LH Band HH Band Hole Drift Velocity

Laboratoire Matériaux et Microélectronique de Provence UMR CNRS Marseille/Toulon (France) - ST Microelectronics Crolles Strain Consequences on Transport Properties F = 50 kV/cm Distribution Functions F kyky kxkx F F kyky kxkx kyky kxkx LH Band HH Band Hole Drift Velocity

Laboratoire Matériaux et Microélectronique de Provence UMR CNRS Marseille/Toulon (France) - ST Microelectronics Crolles Strain Consequences on Transport Properties F = 50 kV/cm Distribution Functions F kyky kxkx F F kyky kxkx kyky kxkx LH Band HH Band Hole Drift Velocity

Laboratoire Matériaux et Microélectronique de Provence UMR CNRS Marseille/Toulon (France) - ST Microelectronics Crolles Strain Consequences on Transport Properties F = 50 kV/cm Distribution Functions F kyky kxkx F F kyky kxkx kyky kxkx LH Band HH Band Hole Drift Velocity

Laboratoire Matériaux et Microélectronique de Provence UMR CNRS Marseille/Toulon (France) - ST Microelectronics Crolles Strain Consequences on Transport Properties F = 50 kV/cm Distribution Functions F kyky kxkx F F kyky kxkx kyky kxkx LH Band HH Band Hole Drift Velocity

Laboratoire Matériaux et Microélectronique de Provence UMR CNRS Marseille/Toulon (France) - ST Microelectronics Crolles Strain Consequences on Transport Properties F = 50 kV/cm Distribution Functions F kyky kxkx F F kyky kxkx kyky kxkx LH Band HH Band Hole Drift Velocity

Laboratoire Matériaux et Microélectronique de Provence UMR CNRS Marseille/Toulon (France) - ST Microelectronics Crolles Strain Consequences on Transport Properties F = 50 kV/cm Distribution Functions F kyky kxkx F F kyky kxkx kyky kxkx LH Band HH Band Hole Drift Velocity

Laboratoire Matériaux et Microélectronique de Provence UMR CNRS Marseille/Toulon (France) - ST Microelectronics Crolles Strain Consequences on Transport Properties F = 50 kV/cm Distribution Functions F kyky kxkx F F kyky kxkx kyky kxkx LH Band HH Band Hole Drift Velocity

Laboratoire Matériaux et Microélectronique de Provence UMR CNRS Marseille/Toulon (France) - ST Microelectronics Crolles Strained Si MOSFET Depth (m) Energy (eV) Hole Density (u.a.) Strained Si Relaxed SiGe CB VB LH sub-Band HH sub-Band Energy Levels Non Localised in the Strained Si Channel Depth (m) Energy (eV) Hole Density (u.a.) Strained Si Relaxed SiGe CB VB LH sub-Band HH sub-Band Energy Levels Non Localised in the Strained Si Channel

Laboratoire Matériaux et Microélectronique de Provence UMR CNRS Marseille/Toulon (France) - ST Microelectronics Crolles Tensile Strain and Quantization Effects Strain and Confinement in [001] direction

Laboratoire Matériaux et Microélectronique de Provence UMR CNRS Marseille/Toulon (France) - ST Microelectronics Crolles Transport Results: Strain effects Hole Velocity versus Time Tsi = 10 nm F = 50 kV/cm

Laboratoire Matériaux et Microélectronique de Provence UMR CNRS Marseille/Toulon (France) - ST Microelectronics Crolles Transport Results: Quantization Effects Hole Velocity versus Electric Field

Laboratoire Matériaux et Microélectronique de Provence UMR CNRS Marseille/Toulon (France) - ST Microelectronics Crolles Transport Results Hole Mobility Enhancement versus Strain

Laboratoire Matériaux et Microélectronique de Provence UMR CNRS Marseille/Toulon (France) - ST Microelectronics Crolles ConclusionConclusion  Strain-induced effects increase hole transport performances in silicon.  Quantization in MOSFET inversion layer tends to decrease the splitting between LH and HH band.  Holes must be localized in the strained channel.  As a consequence, device structure should be carefully optimized:  tsi ≥ 10nm  [Ge] ≥ 30%  Strain-induced effects increase hole transport performances in silicon.  Quantization in MOSFET inversion layer tends to decrease the splitting between LH and HH band.  Holes must be localized in the strained channel.  As a consequence, device structure should be carefully optimized:  tsi ≥ 10nm  [Ge] ≥ 30%